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Vishay Telefunken |
K817P
Vishay Semiconductors
Optocoupler, Phototransistor Output
CE
1
AC
17918_13
C
17203-5
DESCRIPTION
In the K817P part each channel consists of a phototransistor
optically coupled to a gallium arsenide infrared-emitting
diode in a 4 pin (single) plastic dual inline package.
AGENCY APPROVALS
• UL1577, file no. E52744, double protection
• cUL CSA 22.2 bulletin 5A, double protection, E52744
FEATURES
• Endstackable to 2.54 mm (0.1") spacing
• DC isolation test voltage 5000 VRMS
• Current transfer ratio (CTR) selected into
groups
• Low temperature coefficient of CTR
• Wide ambient temperature range
• Available in single, dual and quad channel packages
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Programmable logic controllers
• Modems
• Answering machines
• General applications
ORDER INFORMATION
PART
K817P
K817P1
K817P2
K817P3
K817P4
K817P5
K817P6
K817P7
K817P8
K817P9
REMARKS
CTR 50 % to 600 %, DIP-4
CTR 40 % to 80 %, DIP-4
CTR 63 % to 125 %, DIP-4
CTR 100 % to 200 %, DIP-4
CTR 160 % to 320 %, DIP-4
CTR 50 % to 150 %, DIP-4
CTR 100 % to 300 %, DIP-4
CTR 80 % to 160 %, DIP-4
CTR 130 % to 260 %, DIP-4
CTR 200 % to 400 %, DIP-4
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
tp ≤ 10 µs
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
tp/T = 0.5, tp ≤ 10 ms
Junction temperature
SYMBOL
VR
IF
IFSM
Pdiss
Tj
VCEO
VECO
IC
ICM
Pdiss
Tj
VALUE
6
60
1.5
70
125
70
7
50
100
70
125
UNIT
V
mA
A
mW
°C
V
V
mA
mA
mW
°C
Document Number: 83522
Rev. 1.9, 14-Oct-09
For technical questions, contact: [email protected]
www.vishay.com
1
K817P
Vishay Semiconductors Optocoupler, Phototransistor Output
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
COUPLER
AC isolation test voltage (RMS)
Total power dissipation
Operating ambient temperature range
Storage temperature range
Soldering temperature (2)
t = 1 min
2 mm from case, t ≤ 10 s
VISO
Ptot
Tamb
Tstg
Tsld
5000
200
- 40 to + 100
- 55 to + 125
260
VRMS
mW
°C
°C
°C
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
Junction capacitance
OUTPUT
IF = 50 mA
VR = 0 V, f = 1 MHz
VF
Cj
1.25 1.6
50
V
pF
Collector emitter voltage
Emitter collector voltage
Collector dark current
COUPLER
IC = 100 µA
IE = 100 µA
VCE = 20 V, IF = 0, E = 0
VCEO
VECO
ICEO
70
7
V
V
100 nA
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
IF = 10 mA, IC = 1 mA
IF = 10 mA, VCE = 5 V,
RL = 100 Ω
f = 1 MHz
VCEsat
fc
Ck
0.3 V
100 kHz
0.6 pF
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
VCE = 5 V, IF = 5 mA
IC/IF
VCE = 5 V, IF = 10 mA
VCE = 5 V, IF = 5 mA
PART
K817P
K817P1
K817P2
K817P3
K817P4
K817P5
K817P6
K817P7
K817P8
K817P9
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
50
40
63
100
160
50
100
80
130
200
TYP.
MAX.
600
80
125
200
320
150
300
160
260
400
UNIT
%
%
%
%
%
%
%
%
%
%
www.vishay.com
2
For technical questions, contact: [email protected]
Document Number: 83522
Rev. 1.9, 14-Oct-09
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