파트넘버.co.kr DT455N 데이터시트 PDF


DT455N 반도체 회로 부품 판매점

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR



Diodes Incorporated 로고
Diodes Incorporated
DT455N 데이터시트, 핀배열, 회로
DT455N
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
· High Cell Density DMOS Technology
· Low On-State Resistance
· High Power and Current Capability
· Fast Switching Speed
· High Transient Tolerance
A
B
SOT-223
Dim Min Max
A 6.30 6.71
B 2.90 3.10
D C 6.71 7.29
D 3.30 3.71
CD
E 2.22 2.35
GD S
EG
JH
P
G 0.92 1.00
H 1.10 1.30
J 1.55 1.80
R
K 0.025 0.102
KL
M
N S L 0.66 0.79
M 4.55 4.70
N — 10°
Mechanical Data
P 10° 16°
R 0.254 0.356
· SOT-223 Plastic Case
· Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
S 10° 16°
All Dimensions in mm
Maximum Ratings 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Note 1a Continuous
Pulsed
Maximum Power Dissipation
Note 1a
Note 1b
Note 1c
Operating and Storage Temperature Range
Symbol
VDSS
VGSS
ID
Pd
Tj, TSTG
Value
30
20
±11.5
±40
3.0
1.3
1.1
-65 to +150
Unit
V
V
A
W
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Note 1
Symbol
RQJA
RQJC
Value
42
12
Unit
°C/W
°C/W
Notes:
1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
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DS11609 Rev. C-4
1 of 4
DT455N


DT455N 데이터시트, 핀배열, 회로
Electrical Characteristics25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Tj =55°C
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Tj = 125°C
Static Drain-Source On-Resistance
Tj = 125°C
Symbol
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS (ON)
Min
30
1.0
0.7
Typ
1.5
0.9
0.013
0.019
0.018
On-State Drain Current
ID(ON)
30
15
Forward Transconductance
gFS
26
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS — 1220
Output Capacitance
COSS
715
Reverse Transfer Capacitance
CRSS
280
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
tD(ON)
11
Turn-On Rise Time
tr — 16
Turn-Off Delay Time
tD(OFF)
48
Turn-Off Fall Time
tf — 40
Total Gate Charge
Qg — 46
Gate-Source Charge
Qgs — 4.0
Gate-Drain Charge
Qgd
11
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
IS
Drain-Source Diode Forward Voltage
VSD
— 0.845
Reverse Recovery Time
trr — —
Max
1.0
10
100
-100
3.0
2.2
0.015
0.03
0.02
20
30
80
70
61
2.5
1.2
140
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
Unit
V
µA
nA
nA
Test Conditions
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
V VDS = VGS, ID = 250µA
VGS = 10V, ID = 11.5A
W VGS = 10V, ID = 11.5A
VGS = 4.5V, ID = 10A
A
VGS = 10V, VDS = 5.0V
VGS = 4.5V, VDS = 5.0V
m VDS = 10V, ID = 11.5A
pF
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
pF
ns
ns VDD = 15V, ID = 1.0A
ns VGEN = 10V, RGEN = 6.0W
ns
nC
nC
VDS = 10V. ID = 11.5A.
VGS = 10V
nC
A
V VGS = 0V, IS = 2.5A (Note 2)
ns
VGS = 0V, IF = 2.5A
dlp/dt = 100 A/µs
DS11609 Rev. C-4
2 of 4
DT455N




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DT455N transistor

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DT455N

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR - Diodes Incorporated