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Diodes Incorporated |
DT452P
P-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
· High Cell Density DMOS Technology
· Low On-State Resistance
· High Power and Current Capability
· Fast Switching Speed
· High Transient Tolerance
A
B
D
CD
GD S
EG
JH
KL
M
N
P
Mechanical Data
· SOT-223 Plastic Case
· Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
SOT-223
Dim Min Max
A 6.30 6.71
B 2.90 3.10
C 6.71 7.29
D 3.30 3.71
E 2.22 2.35
G 0.92 1.00
H 1.10 1.30
R J 1.55 1.80
K 0.025 0.102
S L 0.66 0.79
M 4.55 4.70
N — 10°
P 10° 16°
R 0.254 0.356
S 10° 16°
All Dimensions in mm
Maximum Ratings 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Note 1a Continuous
Pulsed
Maximum Power Dissipation
Note 1a
Note 1b
Note 1c
Operating and Storage Temperature Range
Symbol
VDSS
VGSS
ID
Pd
Tj, TSTG
Value
-30
±20
±3.0
±20
3.0
1.3
1.1
-65 to +150
Unit
V
V
A
W
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Note 1
Symbol
RQJA
RQJC
Value
42
12
Unit
°C/W
°C/W
Notes:
1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
the solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user’s board design.
1a. With 1 in2 oz 2 oz. copper mounting pad RQJA = 42°C/W.
1b. With 0.0066 in2 oz 2 oz. copper mounting pad RQJA = 95°C/W.
1c. With 0.0123 in2 oz 2 oz. copper mounting pad RQJA = 110°C/W.
DS11612 Rev. C-4
1 of 4
DT452P
Electrical Characteristics25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Tj = 55°C
BVDSS
IDSS
30
—
—
—
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Tj = 125°C
Static Drain-Source On-Resistance
Tj = 125°C
IGSSF
IGSSR
VGS(th)
RDS (ON)
—
—
-1.0
-0.7
—
—
—
1.6
1.2
0.030
0.042
0.042
0.058
On-State Drain Current
ID(ON)
25
15
—
Forward Transconductance
DYNAMIC CHARACTERISTICS
gFS —
11
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS (Note 2)
—
—
—
720
370
250
Turn-On Delay Time
tD(ON)
—
12
Turn-On Rise Time
tr — 13
Turn-Off Delay Time
tD(OFF)
—
29
Turn-Off Fall Time
tf — 10
Total Gate Charge
Qg — 19
Gate-Source Charge
Qgs — 2.3
Gate-Drain Charge
Qgd — 5.5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
IS
—
—
Drain-Source Diode Forward Voltage
VSD
—
0.9
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
Max
—
1.0
10
100
-100
3.0
2.2
0.035
0.070
0.055
0.100
—
—
—
—
—
20
30
50
20
30
—
—
2.3
1.3
Unit
V
µA
nA
nA
Test Condition
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = 20V, VDS = 0V
V VDS = VGS, ID = 250µA
W
VGS = 10V, ID = 7.2A
VGS = 4.5V, ID = 6.0A
A
VGS = 10V, VDS = 5.0V
VGS = 4.5V, VDS = 5.0V
m VDS = 10V, ID = 7.2A
pF
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
pF
ns
ns VDD = 10V, ID = 1.0A
ns VGEN = 10V, RGEN = 6.0W
ns
nC
nC
VDS = 10V, ID = 3.0A.
VGS = 10V
nC
A
V VGS = 0V, IS = 7.2A (Note 2)
DS11612 Rev. C-4
2 of 4
DT452P
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