파트넘버.co.kr DT014L 데이터시트 PDF


DT014L 반도체 회로 부품 판매점

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR



Diodes Incorporated 로고
Diodes Incorporated
DT014L 데이터시트, 핀배열, 회로
DT014L
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
· High Cell Density DMOS Technology
· Low On-State Resistance
· High Power and Current Capability
· Fast Switching Speed
· High Transient Tolerance
A
B
D
CD
GD S
EG
JH
KL
M
N
P
Mechanical Data
· SOT-223 Plastic Case
· Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
SOT-223
Dim Min Max
A 6.30 6.71
B 2.90 3.10
C 6.71 7.29
D 3.30 3.71
E 2.22 2.35
G 0.92 1.00
H 1.10 1.30
R J 1.55 1.80
K 0.025 0.102
S L 0.66 0.79
M 4.55 4.70
N — 10°
P 10° 16°
R 0.254 0.356
S 10° 16°
All Dimensions in mm
Maximum Ratings 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Note 1a Continuous
Pulsed
Maximum Power Dissipation
Note 1 a
Note 1 b
Note 1 c
Operating and Storage Temperature Range
Thermal Characteristics
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Note 1
Symbol
VDSS
VGSS
ID
Pd
Tj, TSTG
Symbol
RQJA
RQJC
Value
60
±20
±2.6
±10
3.0
1.3
1.1
-65 to +150
Value
42
12
Unit
V
V
A
W
°C
Unit
°C/W
°C/W
Notes:
1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
the solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user’s board design.
1a. With 1 in2 oz 2 oz. copper mounting pad RQJA = 42°C/W.
1b. With 0.0066 in2 oz 2 oz. copper mounting pad RQJA = 95°C/W.
1c. With 0.0123 in2 oz 2 oz. copper mounting pad RQJA = 110°C/W.
DS11603 Rev. C-4
1 of 4
DT014L


DT014L 데이터시트, 핀배열, 회로
Electrical Characteristics25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
60
Zero Gate Voltage Drain Current
Tj =55°C
IDSS
Gate-Body Leakage, Forward
IGSSF
Gate-Body Leakage, Reverse
IGSSR
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Tj = 125°C
VGS(th)
1.0
0.8
1.5
1.2
Static Drain-Source On-Resistance
Tj = 125°C
RDS (ON)
0.17
0.25
0.12
On-State Drain Current
ID(ON)
5.0
10
Forward Transconductance
gFS — 4.0
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS — 214
Output Capacitance
COSS
70
Reverse Transfer Capacitance
CRSS
27
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
tD(ON)
6.0
Turn-On Rise Time
tr — 14
Turn-Off Delay Time
tD(OFF)
15
Turn-Off Fall Time
tf — 10
Total Gate Charge
Qg — 3.6
Gate-Source Charge
Qgs — 0.8
Gate-Drain Charge
Qgd — 1.4
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
IS
Drain-Source Diode Forward Voltage
(Note 2)
VSD
0.85
Reverse Recovery Time
trr — —
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
Max
25
250
100
-100
3.0
2.0
0.2
0.36
0.16
12
25
28
18
5.0
2.3
1.3
140
Unit
V
µA
nA
nA
Test Condition
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
V VDS = VGS, ID = 250µA
VGS = 4.5V, ID = 2.6A
W VGS = 4.5V, ID = 2.6A
VGS = 10V, ID = 3.4A
A
VGS = 4.5, VDS = 5.0V
VGS = 10V, VDS = 5.0V
m VGS = 5.0V, ID = 2.6A
pF
pF
VDS = 30V, VGS = 0V
f = 1.0MHz
pF
ns
ns VDD = 30V, ID = 3.0A
ns VGEN = 10V, RGEN = 12W
ns
nC
nC
VDS = 10V, ID = 2.6A.
VGS = 4.5V
nC
A
V VGS = 0V, IS = 2.3A
ns
VGS = 0V, IF = 2.3A,
dlF / dt = 100 A/µs
DS11603 Rev. C-4
2 of 4
DT014L




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DT014

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR - Diodes Incorporated



DT014L

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR - Diodes Incorporated