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Diodes Incorporated |
DT014
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
· High Cell Density DMOS Technology
· Low On-State Resistance
· High Power and Current Capability
· Fast Switching Speed
· High Transient Tolerance
A
B
D
CD
GD S
EG
JH
KL
M
N
P
Mechanical Data
· SOT-223 Plastic Case
· Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
SOT-223
Dim Min Max
A 6.30 6.71
B 2.90 3.10
C 6.71 7.29
D 3.30 3.71
E 2.22 2.35
G 0.92 1.00
H 1.10 1.30
R J 1.55 1.80
K 0.025 0.102
S L 0.66 0.79
M 4.55 4.70
N — 10°
P 10° 16°
R 0.254 0.356
S 10° 16°
All Dimensions in mm
Maximum Ratings 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Note 1a Continuous
Pulsed
Maximum Power Dissipation
Note 1a
Note 1b
Note 1c
Operating and Storage Temperature Range
Thermal Characteristics
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Note 1
Symbol
VDSS
VGSS
ID
Pd
Tj, TSTG
Symbol
RQJA
RQJC
Value
60
±20
±2.7
±10
3.0
1.3
1.1
-65 to +150
Value
42
12
Unit
V
V
A
W
°C
Unit
°C/W
°C/W
Notes:
the
1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user’s board design.
1a. With 1 in2 oz 2 oz. copper mounting pad RQJA = 42°C/W.
1b. With 0.0066 in2 oz 2 oz. copper mounting pad RQJA = 95°C/W.
1c. With 0.0123 in2 oz 2 oz. copper mounting pad RQJA = 110°C/W.
DS11602 Rev.C-4
1 of 4
DT014
Electrical Characteristics25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
60
—
Zero Gate Voltage Drain Current
Tj =125°C
IDSS
—
—
—
—
Gate-Body Leakage, Forward
IGSSF
—
—
Gate-Body Leakage, Reverse
IGSSR
—
—
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th)
2.0
3.0
Static Drain-Source On-Resistance
RDS (ON)
—
0.18
Forward Transconductance
gFS — 2.0
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS — 155
Output Capacitance
COSS
—
60
Reverse Transfer Capacitance
CRSS
—
15
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
tD(ON)
—
10
Turn-On Rise Time
tr — 64
Turn-Off Delay Time
tD(OFF)
—
10
Turn-Off Fall Time
tf — 10
Total Gate Charge
Qg — 5.0
Gate-Source Charge
Qgs — 1.2
Gate-Drain Charge
Qgd — 2.0
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
IS
—
—
Max Pulsed Drain-Source Diode
Forward Current
ISM —
—
Drain-Source Diode Forward Voltage
(Note 2)
VSD
—
0.95
Reverse Recovery Time
trr — —
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
Max
—
25
250
100
-100
4.0
0.2
—
—
—
—
20
100
20
20
11
3.1
5.8
2.7
22
1.6
140
Unit
V
µA
nA
nA
V
W
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Test Condition
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.6A
VDS = 25V, ID = 1.6A
VDS = 25V, VGS = 0V
f = 1.0MHz
VDD = 30V, ID = 10A
VGEN = 10V, RGEN = 24W
VDS = 48V. ID = 10A.
VGS = 10V
A
A
V VGS = 0V, IS = 2.7A
ns
VGS = 0V, IF = 10A
dlF / dt = 100A/µs
DS11602 Rev.C-4
2 of 4
DT014
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