2SD1064 반도체 회로 부품 판매점
PNP/NPN Epitaxial Planar Silicon Tranasistors
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 Sanyo Semicon Device |
Ordering number:722G
PNP/NPN Epitaxial Planar Silicon Tranasistors
2SB828/2SD1064
50V/12A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
Features
· Low-saturation collector-to-emitter voltage :
VCE(sat)=–0.5V(PNP), 0.4V(NPN) max.
· Wide ASO leading to high resistance to breakdown.
Package Dimensions
unit:mm
2022A
[2SB828/2SD1064]
( ) : 2SB828
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)5A
VCE=(–)5V, IC=(–)1A
IC=(–)6A, IB=(–)0.3A
* : The 2SB828/2SD1064 are classified by 1A hFE as follows :
70 Q 140 100 R 200 140 S 280
1 ; Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Ratings
(–)60
(–)50
(–)6
(–)12
(–)17
80
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
70*
30
10
max
(–)0.1
(–)0.1
280*
0.4
(–0.5)
Unit
mA
mA
MHz
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/10996TS (KOTO)/2-3847/4027KI/7011KI No.722–1/4
2SB828/2SD1064
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Fall Time
Storage Time
Switching Time Test Circuit
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=(–)1mA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)1mA, IC=0
See specified Test Circuit
tf See specified Test Circuit
tstg See specified Test Circuit
Ratings
min typ
(–)60
(–)50
(–)6
(0.2)
0.1
(0.4)
1.2
(0.1)
0.05
max
Unit
V
V
V
µs
µs
µs
µs
µs
µs
Unit (resistance : Ω, capacitance : F)
No.722–2/4
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2SD1064 transistor
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