2SD1046 반도체 회로 부품 판매점
PNP/NPN Epitaxial Planar Silicon Transistors
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 Sanyo Semicon Device |
Ordering number:ENN677D
PNP/NPN Epitaxial Planar Silicon Transistors
2SB816/2SD1046
For LF Power Amplifier, 50W Output
Large Power Switching Applications
Features
· Capable of being mounted easily because of one-
point fixing type plastic molded package (Inter-
changeable with TO-3).
· Wide ASO because of built-in ballast resistance.
· Goode dependence of fT on current and good HF
characteristic.
Package Dimensions
unit:mm
2022A
[2SB816/2SD1046]
15.6 3.2
14.0
4.8
2.0
1.6
2.0
1.0
0.6
( ) : 2SB816
Specifications
123
0.6
5.45 5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature
Tstg
www.DaEtalSehceterti4cUa.lcoCmharacteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)1A
VCE=(–)5V, IC=(–)5A
VCE=(–)5V, IC=(–)1A
Output Capacitance
Cob VCB=(–)10V, f=1MHz
* : The 2SB816/2SD1046 are classified by 1A hFE as follows :
Rank
D
E
hFE 60 to 120 100 to 200
Ratings
(–)150
(–)120
(–)6
(–)8
(–)12
80
150
–40 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
(–)0.1 mA
(–)0.1 mA
60* 200*
20
15 MHz
(220)
pF
160 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003TN (KT)/91098HA (KT)/4017KI/6284KI, MT No.677–1/4
2SB816/2SD1046
Continued from preceding page.
Parameter
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Fall Time
Storage Time
Symbol
Conditions
VBE
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE=(–)5V, IC=(–)1A
IC=(–)5A, IB=(–)0.5A
IC=(–)5mA, IE=0
IC=(–)5mA, RBE=∞
IC=(–)50mA, RBE=∞
IE=(–)5mA, IC=0
ton See specified test circuit.
tf See specified test circuit.
tstg See specified test circuit.
Swicthing Time Test Circuit
PW=20µs
D.C.≤1%
IB1
IB2
OUTPUT
INPUT
VR
200Ω
51Ω
RB
1Ω
+
1µF
RL
20Ω
+
1µF
VBE= --2V
VCC=20V
IC=10IB1= --10IB2=1A
(For PNP, the polarity is reversed.)
Ratings
min typ
(–)150
(–)120
(–)120
(–)6
1.0
(0.22)
0.22
(0.37)
1.02
(0.93)
6.66
max
1.5
2.0
Unit
V
V
V
V
V
V
µs
µs
µs
µs
µs
µs
IC -- VCE
--8
--7 --200mA --160mA
--6 --120mA
--80mA
--5
www.DataSheet4U.com
--4
--40mA
2SB816
--3
--20mA
--2
--1
0 IB=0
0 --10 --20 --30 --40
Collector-to-Emitter Voltage, VCE – V ITR08404
--6
2SB816
IC -- VBE
VCE= --5V
--5
IC -- VCE
8
2SD1046
7 160mA
6 120mA
5
40mA
4
3 20mA
2
1
0 IB=0
0 10 20 30 40
Collector-to-Emitter Voltage, VCE – V ITR08405
6 IC -- VBE
2SD1046
VCE=5V
5
--4 4
--3 3
--2 2
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6
Base-to-Emitter Voltage, VBE – V ITR08406
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Base-to-Emitter Voltage, VBE – V ITR08407
No.677–2/4
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2SD1046 transistor
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