파트넘버.co.kr 2SD1030 데이터시트 PDF


2SD1030 반도체 회로 부품 판매점

Silicon NPN epitaxial planer type(For low-frequency amplification)



Panasonic Semiconductor 로고
Panasonic Semiconductor
2SD1030 데이터시트, 핀배열, 회로
Transistor
2SD1030
Silicon NPN epitaxial planer type
For low-frequency amplification
s Features
q High foward current transfer ratio hFE.
q Low collector to emitter saturation voltage VCE(sat).
q High emitter to base voltage VEBO.
q Low noise voltage NV.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
50
40
15
100
50
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : 1Z
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
fT
VCB = 20V, IE = 0
100 nA
VCE = 20V, IB = 0
1 µA
IC = 10µA, IE = 0
50
V
IC = 1mA, IB = 0
40
V
IE = 10µA, IC = 0
15
V
VCE = 10V, IC = 2mA
400 1000 2000
IC = 10mA, IB = 1mA
0.05 0.2
V
VCB = 10V, IE = –2mA, f = 200MHz 120 MHz
*hFE Rank classification
Rank
hFE
Marking Symbol
R
400 ~ 800
1ZR
S
600 ~ 1200
1ZS
T
1000 ~ 2000
1ZT
1


2SD1030 데이터시트, 핀배열, 회로
Transistor
PC — Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
–25˚C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Cob — VCB
8
IE=0
7 f=1MHz
Ta=25˚C
6
5
4
3
2
1
0
1 3 10 30 100
Collector to base voltage VCB (V)
IC — VCE
160
Ta=25˚C
140
120
IB=100µA
100 90µA
80µA
70µA
80 60µA
50µA
60 40µA
30µA
40
20µA
20
10µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
1800
1500
hFE — IC
VCE=10V
1200
900
600
Ta=75˚C
25˚C
–25˚C
300
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
2SD1030
IC — VBE
120
25˚C
100
Ta=75˚C –25˚C
VCE=10V
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
fT — IE
250 VCB=10V
Ta=25˚C
200
150
100
50
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
2




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2SD1030 transistor

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