파트넘버.co.kr 2SD0602A 데이터시트 PDF


2SD0602A 반도체 회로 부품 판매점

Silicon NPN epitaxial planer type



Panasonic Semiconductor 로고
Panasonic Semiconductor
2SD0602A 데이터시트, 핀배열, 회로
Transistors
2SD0602A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB0710A
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
I Features
Low collector to emitter saturation voltage VCE(sat)
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
60
50
5
1
500
200
150
55 to +150
Unit
V
V
V
A
mA
mW
°C
°C
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10°
1: Base
2: Emitter
3: Collector
Marking Symbol: X
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio *1
Collector to emitter saturation voltage *1
Transition frequency
Collector output capacitance
Note) *1: Pulse measurement
*2: Rank classification
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1 *2
hFE2
VCE(sat)
fT
Cob
Conditions
VCB = 20 V, IE = 0
IC = 10 µA, IE = 0
IC = 10 mA, IB = 0
IE = 10 µA, IC = 0
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 500 mA
IC = 300 mA, IB = 30 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Rank
Q
R
S No-rank
hFE1
Marking symbol
85 to 170
XQ
120 to 240
XR
170 to 340
XS
85 to 340
X
Product of no-rank is not classified and have no indication for rank.
Min
60
50
5
85
40
Typ Max
0.1
340
0.35 0.6
200
6 15
Unit
µA
V
V
V
V
MHz
pF
1


2SD0602A 데이터시트, 핀배열, 회로
2SD0602A
Transistors
PC Ta
240
200
160
120
80
40
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
800
Ta = 25°C
700
IB = 10 mA
9 mA
600 8 mA
7 mA
6 mA
500 5 mA
4 mA
400 3 mA
300 2 mA
200 1 mA
100
0
0 4 8 12 16 20
Collector to emitter voltage VCE (V)
VCE(sat) IC
100 IC / IB = 10
30
10
3
1
0.3 Ta = 75°C
25°C
0.1 25°C
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
VBE(sat) IC
100 IC / IB = 10
30
10
3
25°C
1 Ta = −25°C
75°C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
fT IE
240
VCB = 10 V
Ta = 25°C
200
160
120
80
40
0
1 2 3 5 10 2030 50 100
Emitter current IE (mA)
Cob VCB
12
IE = 0
f = 1 MHz
10 Ta = 25°C
8
6
4
2
0
1 2 3 5 10 20 30 50 100
Collector to base voltage VCB (V)
800
700
600
500
400
300
200
100
0
0
IC IB
VCE = 10 V
Ta = 25°C
2468
Base current IB (mA)
10
hFE IC
300
VCE = 10 V
250
Ta = 75°C
200 25°C
150 25°C
100
50
0
0.01 0.03 0.1 0.3 1
3
Collector current IC (A)
10
VCER RBE
120
IC = 2 mA
Ta = 25°C
100
80
60
40
20
0
1 3 10 30 100 300 1 000
Base to emitter resistance RBE (k)
2




PDF 파일 내의 페이지 : 총 2 페이지

제조업체: Panasonic Semiconductor

( panasonic )

2SD0602A transistor

데이터시트 다운로드
:

[ 2SD0602A.PDF ]

[ 2SD0602A 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


2SD0602

Silicon NPN epitaxial planer type - Panasonic Semiconductor



2SD0602A

Silicon NPN epitaxial planer type - Panasonic Semiconductor