ED1802L 반도체 회로 부품 판매점
PNP general purpose transistor
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 NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
ED1802
PNP general purpose transistor
Product specification
Supersedes data of 1997 May 27
1999 Apr 27
Philips Semiconductors
PNP general purpose transistor
Product specification
ED1802
FEATURES
• Low current (max. 500 mA)
• Low voltage (max. 25 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complement: ED1702.
PINNING
PIN
1
2
3
emitter
base
collector
DESCRIPTION
handbook, halfpage1
2
3
2
MAM281
3
1
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−30
−25
−5
−500
−1
−200
625
+150
150
+150
UNIT
V
V
V
mA
A
mA
mW
°C
°C
°C
1999 Apr 27
2
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ED1802L transistor
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