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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
ED1502
NPN general purpose transistor
Product specification
Supersedes data of 1997 May 01
1999 Apr 27
Philips Semiconductors
NPN general purpose transistor
Product specification
ED1502
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 20 V)
• High gain.
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a plastic TO-92; SOT54 package.
PINNING
PIN
1
2
3
emitter
base
collector
DESCRIPTION
handbook, halfpage1
2
3
2
MAM182
3
1
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Refer to TO-92; SOT54 standard mounting conditions.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
40
20
4
25
25
25
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 27
2
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