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Fairchild Semiconductor |
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
DESCRIPTION
The FOD817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
FEATURES
• Applicable to Pb-free IR reflow soldering
• Compact 4-pin package
• Current transfer ratio in selected groups:
FOD817: 50-600%
FOD817A: 80-160%
FOD817B: 130-260%
FOD817C: 200-400%
FOD817D: 300-600%
• C-UL, UL and VDE approved
• High input-output isolation voltage of 5000 Vrms
APPLICATIONS
FOD817 Series
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
4
1
FUNCTIONAL BLOCK DIAGRAM
ANODE 1
CATHODE 2
4 COLLECTOR
3 EMITTER
ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise specified.)
Parameter
Symbol
Value
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation
EMITTER
Continuous Forward Current
Reverse Voltage
LED Power Dissipation
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation
Derate above 25°C
TSTG
TOPR
TSOL
PD
IF
VR
PD
VCEO
VECO
IC
PD
-55 to +125
-30 to +100
260 for 10 sec
200
50
6
70
0.93
70
6
50
150
2.0
Units
°C
°C
°C
mW
mA
V
mW
mW/°C
V
V
mA
mW
mW/°C
© 2004 Fairchild Semiconductor Corporation
Page 1 of 9
8/19/04
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions Symbol Min Typ* Max Unit
EMITTER
Input Forward Voltage
Reverse Leakage Current
Terminal Capacitance
DETECTOR
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
*Typical values at TA = 25°C.
(IF = 20 mA)
(VR = 4.0 V)
(V = 0, f = 1 kHz)
(IC = 0.1 mA, IF = 0)
(IE = 10 µA, IF = 0)
(VCE = 20 V, IF = 0)
VF — 1.2 1.4 V
IR — — 10 µA
Ct – 30 250 pF
BVCEO 70 — — V
BVECO
6
–
–V
ICEO — – 100 nA
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
DC Characteristic
Test Conditions
Symbol Device Min Typ* Max Unit
FOD817 50
— 600 %
FOD817A 80
— 160 %
Current Transfer Ratio
(IF = 5 mA, VCE = 5 V) (note 1)
CTR FOD817B 130 — 260 %
FOD817C 200 — 400 %
FOD817D 300 — 600 %
Collector-Emitter
Saturation Voltage
(IF = 20 mA, IC = 1 mA)
VCE (SAT)
— 0.1 0.2 V
AC Characteristic
Rise Time
Fall Time
(IC = 2 mA, VCE = 2 V, RL = 100Ω) (note 2)
(IC = 2 mA, VCE = 2 V, RL = 100Ω) (note 2)
tr
tf
— 4 18 µs
— 3 18 µs
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions
Symbol
Input-Output Isolation Voltage (note 3)
Isolation Resistance
Isolation Capacitance
*Typical values at TA = 25°C.
f = 60Hz, t = 1 min
(VI-O = 500 VDC)
(VI-O = 0, f = 1 MHz)
VISO
RISO
CISO
NOTES
1. Current Transfer Ratio (CTR) = IC/IF x 100%.
2. For test circuit setup and waveforms, refer to page 4.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
Min
5000
5 x 1010
Typ*
1011
0.6
Max Units
Vac(rms)
Ω
1.0 pf
© 2004 Fairchild Semiconductor Corporation
Page 2 of 9
8/19/04
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