파트넘버.co.kr FOD817C 데이터시트 PDF


FOD817C 반도체 회로 부품 판매점

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS



Fairchild Semiconductor 로고
Fairchild Semiconductor
FOD817C 데이터시트, 핀배열, 회로
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
DESCRIPTION
The FOD817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
FEATURES
• Applicable to Pb-free IR reflow soldering
• Compact 4-pin package
• Current transfer ratio in selected groups:
FOD817: 50-600%
FOD817A: 80-160%
FOD817B: 130-260%
FOD817C: 200-400%
FOD817D: 300-600%
• C-UL, UL and VDE approved
• High input-output isolation voltage of 5000 Vrms
APPLICATIONS
FOD817 Series
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
4
1
FUNCTIONAL BLOCK DIAGRAM
ANODE 1
CATHODE 2
4 COLLECTOR
3 EMITTER
ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise specified.)
Parameter
Symbol
Value
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation
EMITTER
Continuous Forward Current
Reverse Voltage
LED Power Dissipation
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation
Derate above 25°C
TSTG
TOPR
TSOL
PD
IF
VR
PD
VCEO
VECO
IC
PD
-55 to +125
-30 to +100
260 for 10 sec
200
50
6
70
0.93
70
6
50
150
2.0
Units
°C
°C
°C
mW
mA
V
mW
mW/°C
V
V
mA
mW
mW/°C
© 2004 Fairchild Semiconductor Corporation
Page 1 of 9
8/19/04


FOD817C 데이터시트, 핀배열, 회로
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions Symbol Min Typ* Max Unit
EMITTER
Input Forward Voltage
Reverse Leakage Current
Terminal Capacitance
DETECTOR
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
*Typical values at TA = 25°C.
(IF = 20 mA)
(VR = 4.0 V)
(V = 0, f = 1 kHz)
(IC = 0.1 mA, IF = 0)
(IE = 10 µA, IF = 0)
(VCE = 20 V, IF = 0)
VF — 1.2 1.4 V
IR — — 10 µA
Ct – 30 250 pF
BVCEO 70 — — V
BVECO
6
–V
ICEO — – 100 nA
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
DC Characteristic
Test Conditions
Symbol Device Min Typ* Max Unit
FOD817 50
— 600 %
FOD817A 80
— 160 %
Current Transfer Ratio
(IF = 5 mA, VCE = 5 V) (note 1)
CTR FOD817B 130 — 260 %
FOD817C 200 — 400 %
FOD817D 300 — 600 %
Collector-Emitter
Saturation Voltage
(IF = 20 mA, IC = 1 mA)
VCE (SAT)
— 0.1 0.2 V
AC Characteristic
Rise Time
Fall Time
(IC = 2 mA, VCE = 2 V, RL = 100) (note 2)
(IC = 2 mA, VCE = 2 V, RL = 100) (note 2)
tr
tf
— 4 18 µs
— 3 18 µs
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions
Symbol
Input-Output Isolation Voltage (note 3)
Isolation Resistance
Isolation Capacitance
*Typical values at TA = 25°C.
f = 60Hz, t = 1 min
(VI-O = 500 VDC)
(VI-O = 0, f = 1 MHz)
VISO
RISO
CISO
NOTES
1. Current Transfer Ratio (CTR) = IC/IF x 100%.
2. For test circuit setup and waveforms, refer to page 4.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
Min
5000
5 x 1010
Typ*
1011
0.6
Max Units
Vac(rms)
1.0 pf
© 2004 Fairchild Semiconductor Corporation
Page 2 of 9
8/19/04




PDF 파일 내의 페이지 : 총 9 페이지

제조업체: Fairchild Semiconductor

( fairchild )

FOD817C transistor

데이터시트 다운로드
:

[ FOD817C.PDF ]

[ FOD817C 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


FOD817

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS - Fairchild Semiconductor



FOD817

(FOD617 - FOD817) 4-Pin High Operating Temperature Phototransistor Optocouplers - Fairchild Semiconductor



FOD817A

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS - Fairchild Semiconductor



FOD817B

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS - Fairchild Semiconductor



FOD817C

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS - Fairchild Semiconductor



FOD817D

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS - Fairchild Semiconductor