F2246 반도체 회로 부품 판매점
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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 Polyfet RF Devices |
polyfet rf devices
F2246
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
2 Watts Single Ended
Package Style AC
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
20 Watts
10 oC/W
200 oC
-65 oC to 150oC
0.8 A
50 V
50 V 30V
RF CHARACTERISTICS (
SYMBOL PARAMETER
MIN TYP
Gps Common Source Power Gai
10
η Drain Efficiency
50
VSWR Load Mismatch Toleranc
2WATTS OUTPUT )
MAX UNITS TEST CONDITIONS
dB Idq = 0.2 A, Vds = 12.5 V, F = 850 MHz
% Idq = 0.2 A, Vds = 12.5 V, F = 850 MHz
20:1 Relative Idq = 0.2 A, Vds = 12.5 V, F = 850 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
40
V Ids = 0.01 A, Vgs = 0V
Idss Zero Bias Drain Curren
0.2 mA Vds = 12.5 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids =0.02 A, Vgs = Vds
gM Forward Transconductanc
0.2
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
2
Ohm
Vgs = 20V, Ids =1.6 A
Idsat
Saturation Curren
2.3
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
7.5 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
1.2
pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
8 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
POUT VS PIN GRAPH
F2246
100
CAPACITANCE VS VOLTAGE
F2C 1 DIE CAPACITANCE
IV CURVE
2.5
2
1.5
1
0.5
0
024
Vg = 2V
Vg = 4V
F2C I DIE IV CURVE
6 8 10
Vds in Volts
Vg = 6V
Vg = 8V
12 14 16
Vg = 10V
Vg = 12V
S11 AND S22 SMITH CHART
10
Ciss
Coss
Crss
1
0 5 10 15 20 25 30
VDS IN VOLTS
ID AND GM VS VGS
F2C 1 DIE GM & ID vs VGS
10
Id
1
0.1 Gm
0.01
0 2 4 6 8 10 12 14
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
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제조업체: Polyfet RF Devices
( polyfet )
F2246 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
F2246
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR - Polyfet RF Devices
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