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Fairchild Semiconductor |
FJNS4210R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=10KΩ)
• Complement to FJNS3210R
1 TO-92S
1.Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
-40
-40
-5
-100
300
150
-55 ~ 150
V
V
V
mA
mW
°C
°C
Equivalent Circuit
C
R
B
E
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
ICBO
hFE
VCE (sat)
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
IC= -100µA, IE=0
IE= -1mA, IB=0
VCB= -30V, IE=0
VCE= -5V, IC= -1mA
IC= -10mA, IB= -1mA
VCB= -10V, IE=0
f=1MHz
fT
Current Gain Bandwidth Product
VCE= -10V, IC= -5mA
R Input Resistor
Min.
-40
-40
100
7
Typ.
5.5
200
10
Max.
-0.1
600
-0.3
Units
V
V
µA
V
pF
MHz
13 KΩ
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
Typical Characteristics
10k
VCE = - 5V
R = 10K
1k
100
10
-0.1
-1 -10
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
-100
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175
Ta[oC], AMBIENT TEMPERATURE
Figure 3. Power Derating
-1000
-100
IC = 10IB
R = 10k
-10
-1
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 2. Collector-Emitter Saturation
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
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