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FJNS4206R 반도체 회로 부품 판매점

PNP Epitaxial Silicon Transistor



Fairchild Semiconductor 로고
Fairchild Semiconductor
FJNS4206R 데이터시트, 핀배열, 회로
FJNS4206R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=10K, R2=47K)
• Complement to FJNS3206R
1 TO-92S
1.Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
-50
-50
-10
-100
300
150
-55 ~ 150
V
V
V
mA
mW
°C
°C
Equivalent Circuit
R1
B
R2
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
ICBO
hFE
VCE(sat)
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
IC= -10µA, IE=0
IC= -100µA, IB=0
VCB= -40V, IE=0
VCE= -5V, IC= -5mA
IC= -10mA, IB= -0.5mA
VCB= -10V, IE=0
f=1.0MHz
fT
VI(off)
VI(on)
R1
R1/R2
Current Gain Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
VCE= -10V, IC= -5mA
VCE= -5V, IC= -100µA
VCE= -0.3V, IC= -1mA
Min. Typ. Max.
-50
-50
-0.1
68
-0.3
5.5
200
-0.3
7
0.19
10
0.21
-1.4
13
0.24
C
E
Units
V
V
µA
V
pF
MHz
V
V
K
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002


FJNS4206R 데이터시트, 핀배열, 회로
Typical Characteristics
1000
VCE = - 5V
R1 = 10K
R2 = 47K
100
10
1
-0.1 -1 -10
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
-100
-10k
V = - 5V
CE
R = 10K
1
R = 47K
2
-1k
-100
-10
-1
-0.1 -0.3 -0.5 -0.7 -0.9 -1.1 -1.3 -1.5 -1.7 -1.9 -2.1
V (off)[V], INPUT OFF VOLTAGE
I
Figure 3. Input Off Voltage
-100
VCE =- 0.3V
R1 = 10K
R2 = 47K
-10
-1
-0.1
-0.1
-1 -10
IC[mA], COLLECTOR CURRENT
Figure 2. Input On Voltage
-100
400
350
300
250
200
150
100
50
0
0
25 50 75 100 125 150
Ta[oC], AMBIENT TEMPERATURE
175
Figure 4. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002




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FJNS4206R transistor

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FJNS4206R

PNP Epitaxial Silicon Transistor - Fairchild Semiconductor