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Fairchild Semiconductor |
FJN3301R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ)
• Complement to FJN4301R
1 TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
50
50
10
100
300
150
-55 ~ 150
V
V
V
mA
mW
°C
°C
Equivalent Circuit
R1
B
R2
C
E
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
ICBO
hFE
VCE(sat)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
IC=10µA, IE=0
IC=100µA, IB=0
VCB=40V, IE=0
VCE=5V, IC=10mA
IC=10mA, IB=0.5mA
VCE=10V, IC=5mA
VCB=10V, IE=0
f=1.0MHz
VI(off)
VI(on)
R1
R1/R2
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
VCE=5V, IC=100µΑ
VCE=0.3V, IC=20mA
Min.
50
50
20
0.5
3.2
0.9
Typ.
250
3.7
4.7
1
Max.
0.1
Units
V
V
µA
0.3 V
MHz
pF
V
3V
6.2 KΩ
1.1
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
Typical Characteristics
1000
VCE = 5V
R1 = 4.7K
R2 = 4.7K
100
10
1 10 100
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
1000
V = 5V
CE
1000
R = 4.7K
1
R = 4.7K
2
100
10
0.0 0.4 0.8 1.2 1.6 2.0
VI(off)[V], INPUT OFF VOLTAGE
Figure 3. Input Off Voltage
2.4
100
VCE =0.3V
R1 = 4.7K
R2 = 4.7K
10
1
0.1
0.1
1 10
IC[mA], COLLECTOR CURRENT
Figure 2. Input On Voltage
100
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175
Ta[0C], AMBIENT TEMPERATURE
Figure 4. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
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