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FJL6825 반도체 회로 부품 판매점

NPN Triple Diffused Planar Silicon Transistor



Fairchild Semiconductor 로고
Fairchild Semiconductor
FJL6825 데이터시트, 핀배열, 회로
FJL6825
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• Low Saturation Voltage : VCE(sat) = 3V (Max.)
• For Color Monitor
1 TO-264
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP* Collector Current (Pulse)
PC Collector Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Rating
1500
750
6
25
35
200
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
ICES
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
hFE1
hFF2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
tSTG*
Storage Time
tF* Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0
VCB=800V, IE=0
VEB=4V, IC=0
IC=500µA, IE=0
IC=5mA, IB=0
IE=500µA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=12A
IC=12A, IB=3A
IC=12A, IB=3A
VCC=200V, IC=12A, RL=17
IB1=2.4A, IB2= - 4.8A
Min.
1500
750
6
10
6
Typ.
0.15
Max.
1
10
1
9
3
1.5
3
0.2
Units
mA
µA
mA
V
V
V
V
V
µs
µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC Thermal Resistance, Junction to Case
Typ
Max
0.625
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001


FJL6825 데이터시트, 핀배열, 회로
Typical Characteristics
16
IB=2.0A
14
12
10
8
IB=0.6A
6 IB=0.4A
4
IB=0.2A
2
0
0 2 4 6 8 10 12
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics
1
I =3I
CB
0.1
Ta = 1250C
Ta = 250C
Ta =- 250C
0.01
0.1
1
10 100
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
16
V = 5V
14 CE
12
10
8
6
4
Ta = 1250C
2
250C
- 250C
0
0.0 0.2 0.4 0.6 0.8 1.0
VBE [V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
1.2
©2001 Fairchild Semiconductor Corporation
100
Ta = 1250C
Ta = 250C
10
Ta= - 250C
V = 5V
CE
1
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 2. DC Current Gain
100
10
IC = 5 IB
1
0.1
Ta = 1250C
Ta = - 250C
Ta = 250C
0.01
0.1
1 10
IC [A], COLLECTOR CURRENT
100
Figure 4. Collector-Emitter Saturation Voltage
10
I = 2.4A, V = 200V
B1 CC
I = 12A
C
tSTG
1
tF
0.1
1
10
IB2 [A], REVERSE BASE CURRENT
Figure 6. Resistive Load Switching Time
Rev. A, May 2001




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FJL6825 transistor

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