파트넘버.co.kr LY402 데이터시트 PDF


LY402 반도체 회로 부품 판매점

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR



Polyfet RF Devices 로고
Polyfet RF Devices
LY402 데이터시트, 핀배열, 회로
polyfet rf devices
LY402
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
220.0 Watts Push - Pull
Package Style AY
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
Total
Device
Dissipation
440 Watts
Junction to
Case Thermal
Resistance
o
0.38 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
200 oC
Storage
Temperature
oo
-65 C to 150 C
DC Drain
Current
13.5 A
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS ( 220.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
η Drain Efficiency
13
60
dB Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz
% Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
65 V Ids = 0.50 mA, Vgs = 0V
2.0 mA
Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Current
1 uA Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
1
7V
Ids = 0.30 A, Vgs = Vds
gM Forward Transconductance
5.4 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.17
Ohm
Vgs = 20V, Ids =16.00 A
Idsat
Saturation Current
34.00
Amp
Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
160.0
pF Vds = 28.0 Vgs = 0V, F = 1 MHz
Crss Common Source Feedback Capacitance
8.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
100.0
pF Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 01/17/2002
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com


LY402 데이터시트, 핀배열, 회로
LY402
POUT VS PIN GRAPH
LY402 Pin vs Pout F=500Mhz; Vds=28Vdc, Idq=.8A
260
18
240
220
17
200
180
16
160
Pout
15
140
120
100
14
80
60
40 E f f i c i e n c y @ 1 9 0 W = 6 0 %
20
Gain
13
12
0 11
0 2 4 6 8 10 12 14 16 18 20
Pin in Watts
IV CURVE
L4 2 DIE IV
35
30
25
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
VDSINVOLTS
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
Zin Zout
1000
100
10
1
0
100
10
CAPACITANCE VS VOLTAGE
L4 2DIE CAPACITANCE
Coss
Ciss
Crss
5 10 15 20 25 30
VDS IN VOLTS
ID & GM VS VGS
L4 2 DIE ID, GM vs VG
ID
1
0.1
0 2 4 6 8 10 12 14
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
01/17/2002
POLYFET RF DEVICES
REVISION
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com




PDF 파일 내의 페이지 : 총 2 페이지

제조업체: Polyfet RF Devices

( polyfet )

LY402 transistor

데이터시트 다운로드
:

[ LY402.PDF ]

[ LY402 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


LY402

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR - Polyfet RF Devices