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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
LWE2010S
NPN microwave power transistor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
1997 Feb 19
Philips Semiconductors
NPN microwave power transistor
Product specification
LWE2010S
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
APPLICATIONS
Common emitter class A power
amplifiers at frequencies up to
2.3 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT446A metal ceramic flange
package, with emitter connected to
flange.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class A
selective amplifier.
MODE OF
OPERATION
class A (CW)
f
(GHz)
2.3
VCE
(V)
18
IC
(mA)
110
PL1
(W)
≥0.8
Gpo
(dB)
≥8
ZI/ZL
(Ω)
see Figs 6
and 7
PINNING - SOT446A
PIN DESCRIPTION
1 collector
2 base
3 emitter connected to flange
handbook, halfpage
1
2
3b
MAM313
c
e
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
2
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