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Motorola Inc |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Medium-Power Complementary
Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
• High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc
• Monolithic Construction with Built–in Base–Emitter Shunt Resistors
Order this document
by MJ1000/D
NPN
MJ1000
MJ1001*
*Motorola Preferred Device
10 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 – 80 VOLTS
90 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMTÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎHCCECBTOTAohEmaooopXDtÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎeslllaeRllilIeeeteerlrMtmMarccecDCattttraUÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎoooieAt–unelrrrvMBrgR––LirCacaEBeeabeusRCÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎnmasnoertiDsAHdrsvieteVtieTtASsaneoÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVsInt2trRlNotoic5pVarlAGe_taagoaÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ,CtgCelSgitJoeaeTungJnEeÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ucRCntichoITStnaÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCioRTrtnao=aIcCtTCÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2itenSe5amgr_sisCpeÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎteircatÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎureRÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎangÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎe ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSSTVRJyyVVÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCP,mmθIICECBTEDJbbBBsCOtooÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎgll ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎJ661000ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ0–05ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ50M1t50.19o.5..a900ÎÎÎÎÎÎÎÎ01ÎÎÎÎÎÎÎ1+x4520ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎM0J88100ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ0CT0OA(1TS–ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎO2E0–143–AÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ)0A7 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎW_WUUVVVAAC_a/nndddddC_/tWccccciitÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCtts ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
PNP
MJ900
MJ901
COLLECTOR
NPN
MJ1000
MJ1001
COLLECTOR
BASE
BASE
≈ 4.0 k ≈ 60
≈ 4.0 k ≈ 60
EMITTER
Figure 1. Darlington Circuit Schematic
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
EMITTER
1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMJ1000 MJ1001
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Emitter Leakage Current
(VCB = 60 Vdc, RBE = 1.0k ohm)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 80 Vdc, RBE = 1.0k ohm)
(VCB = 60 Vdc, RBE = 1.0k ohm, TC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 80 Vdc, RBE = 1.0k ohm, TC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Emitter Leakage Current (VCE = 30 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, IB = 0)
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDCCurrentGain(1) (IC=3.0Adc,VCE=3.0Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Emitter Saturation Voltage(1) (IC = 30 Adc, IB = 12 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 8.0 Adc, IB = 40 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Emitter Voltage(1) (IC = 3.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv v(1)Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Symbol
MJ1000
MJ1001
MJ1000
MJ1001
MJ1000
MJ1001
MJ1000
MJ1001
V(BR)CEO
ICER
IEBO
ICEO
hFE
VCE(sat)
VBE(on)
Min
60
80
—
—
—
—
—
—
—
1000
750
—
—
—
Max Unit
— Vdc
—
mAdc
1.0
1.0
5.0
5.0
2.0 mAdc
500 µAdc
500
——
—
2.0 Vdc
4.0
2.5 Vdc
50,000
3000
20,000
2000
10,000
5000
2000
1000
500
200
100
TJ = 150°C
25°C
– 55°C
VCE = 3.0 V
1000 TC = 25°C
500
300
200 VCE = 3.0 Vdc
IC = 3.0 Adc
100
50
50
0.01
0.05 0.1 0.2 0.5 1.0 2.0
IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
5.0 10
30103 104 105 106
f, FREQUENCY (Hz)
Figure 3. Small–Signal Current Gain
3.5
3.0 TJ = 25°C
10
7.0 TJ = 200°C
5.0
2.5
2.0
VBE(sat) @ IC/IB = 250
1.5
1.0 VBE @ VCE = 3.0 V
0.5 VCE(sat) @ IC/IB = 250
3.0
2.0
SECONDARY BREAKDOWN
1.0 LIMITATION
0.7 THERMAL LIMITATION @ TC = 25°C
0.5 BONDING WIRE LIMITATION
0.3 MJ1000
0.2
MJ1001
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
0.1
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
There we two limitations on the power handling ability of a
transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE lim-
its of the transistor that must be observed for reliable opera-
tion; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
2 Motorola Bipolar Power Transistor Device Data
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