HN1K05FU 반도체 회로 부품 판매점
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
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 Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K05FU
HN1K05FU
For Portable Devices
High Speed Switching Applications
Interface Applications
Unit: mm
· High input impedance and extremely low drive current.
· Vth is low and it is possible to drive directly at low-voltage CMOS.
: Vth = 0.5 to 1.0 V
· Suitable for high-density mounting because of a compact package.
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note: TOTAL rating
Symbol
VDS
VGSS
ID
PD (Note)
Tch
Tstg
Rating
20
10
100
200
150
-55 to 150
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
JEDEC
JEITA
TOSHIBA
Weight: 6.8 mg
―
―
2-2J1C
Characteristic
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance 1
Drain-Source ON resistance 2
Drain-Source ON resistance 3
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Symbol
Test Condition
Min Typ. Max Unit
IGSS
V (BR) DSS
IDSS
Vth
ïYfsï
RDS (ON) 1
RDS (ON) 2
RDS (ON) 3
Ciss
Crss
Coss
ton
toff
VGS = 10 V, VDS = 0 V
ID = 100 mA, VGS = 0 V
VDS = 20 V, VGS = 0 V
VDS = 1.5 V, ID = 0.1 mA
VDS = 1.5 V, ID = 10 mA
ID = 1 mA, VGS = 1.2 V
ID = 10 mA, VGS = 1.5 V
ID = 10 mA, VGS = 2.5 V
VDS = 1.5 V, VGS = 0 V, f = 1 MHz
VDS = 1.5 V, VGS = 0 V, f = 1 MHz
VDS = 1.5 V, VGS = 0 V, f = 1 MHz
VDD = 1.5 V, ID = 10 mA,
VGS = 0 to 1.5 V
VDD = 1.5 V, ID = 10 mA,
VGS = 0 to 1.5 V
¾
20
¾
0.5
35
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
70
15
10
7
12
3.4
12
0.35
0.2
1
¾
1
1
¾
50
40
28
¾
¾
¾
¾
¾
mA
V
mA
V
mS
W
W
W
pF
pF
pF
ms
1 2002-01-16
Equivalent Circuit (top view)
654
Marking
654
HN1K05FU
Q1
Q2
KK
123
(Q1, Q2 common)
Switching Time Test Circuit
(a) Test circuit
1.5 V
0
10 ms
VIN
IN
ID OUT VDD = 1.5 V
D.U. <= 1%
VIN: tr, tf < 5 ns
(Zout = 50 W)
Common Source
VDD Ta = 25°C
123
(b) VIN
VGS
(c) VOUT
VDS
1.5 V
0
VDD
10%
90%
10%
VDS (ON)
90%
tr
tf
ton toff
2 2002-01-16
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제조업체: Toshiba Semiconductor
( toshiba )
HN1K05FU transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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