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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2PA1015
PNP general purpose transistor
Product specification
Supersedes data of 1997 May 01
1999 Apr 08
Philips Semiconductors
PNP general purpose transistor
Product specification
2PA1015
FEATURES
• Low current (max. 150 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a plastic TO-92; SOT54 package.
NPN complement: 2PC1815.
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
handbook, halfpage1
2
3
1
MAM285
2
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−50
−50
−5
−150
−200
−200
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 08
2
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