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Advanced Semiconductor |
AJT015
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AJT015 is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 1.8 A
VCC
PDISS
TJ
TSTG
θJC
32 V
50 W @ TC ≤ 100 OC
-65 OC to +250 OC
-65 OC to +200 OC
3.0 OC/W
PACKAGE STYLE .310 2L FLG
4x .062 x 45°
2xB
ØE
D
A .040 x 45°
C
F
G
I
M
H
J
K
L
R
NP
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .095 / 2.41
.105 / 2.67
B .100 / 2.54
.120 / 3.05
C .050 / 1.27
D .286 / 7.26
.306 / 7.77
E .110 / 2.79
.130 / 3.30
F .306 / 7.77
.318 / 8.08
G .148 / 3.76
H .400 / 10.16
I .119 / 3.02
J .552 / 14.02
.572 / 14.53
K .790 / 20.07
.810 / 20.57
L .300 / 7.62
.320 / 8.13
M .003 / 0.08
.006 / 0.15
N .052 / 1.32
.072 / 1.83
P .118 / 3.00
.131 / 3.33
R .230 / 5.84
ORDER CODE: ASI10545
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 10 mA
BVCER
IC = 10 mA
RBE = 10 Ω
BVEBO
IE = 1 mA
ICES VCE = 28 V
VBE = 0 V
hFE VCE = 5.0 V
IC = 500 mA
MINIMUM TYPICAL MAXIMUM
55
55
3.5
2.0
15 150
UNITS
V
V
V
mA
---
PG
VCC = 45 V POUT = 15 W
f = 960 - 1215 MHz 8.1
ηC 40
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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