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NXP Semiconductors |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BCF29; BCF30
PNP general purpose transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 22
Philips Semiconductors
www.DataSheet4U.com
PNP general purpose transistors
Product specification
BCF29; BCF30
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 32 V).
APPLICATIONS
• Low level, low noise general purpose applications in
thick and thin-film circuits.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BCF32 and BCF33.
MARKING
TYPE NUMBER
BCF29
BCF30
MARKING CODE
C7p
C8p
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
1
Top view
2
MAM256
2
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
ICM
Ptot
hFE
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
BCF29
BCF30
fT transition frequency
CONDITIONS
open emitter
open base
Tamb ≤ 25 °C
IC = −2 mA; VCE = −5 V
IC = −10 mA; VCE = −5 V; f = 100 MHz
MIN.
−
−
−
−
MAX.
−32
−32
−200
250
UNIT
V
V
mA
mW
120 260
215 500
100 −
MHz
1997 May 22
2
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