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BC858BLT1 반도체 회로 부품 판매점

General Purpose Transistors



Motorola  Inc 로고
Motorola Inc
BC858BLT1 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
PNP Silicon
COLLECTOR
3
1
BASE
BC856ALT1,BLT1
BC857ALT1,BLT1
BC858ALT1,BLT1,
CLT1
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol BC856 BC857 BC858 Unit
Collector – Emitter Voltage
Collector – Base Voltage
VCEO
–65
–45
–30
VCBO
–80
–50
–30
V
V
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VEBO
IC
–5.0
–100
–5.0
–100
–5.0
–100
V
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F;
BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L
Motorola Preferred Devices
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)CEO
–65
–45
–30
V
Collector – Emitter Breakdown Voltage
(IC = –10 µA, VEB = 0)
BC856 Series
BC857 Series
BC858 Series
V(BR)CES
–80
–50
–30
V
Collector – Base Breakdown Voltage
(IC = –10 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)CBO
–80
–50
–30
V
Emitter – Base Breakdown Voltage
(IE = –1.0 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)EBO
–5.0
–5.0
–5.0
V
Collector Cutoff Current (VCB = –30 V)
Collector Cutoff Current (VCB = –30 V, TA = 150°C)
ICBO — — –15 nA
— — –4.0 µA
1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2–154
Motorola Small–Signal Transistors, FETs and Diodes Device Data


BC858BLT1 데이터시트, 핀배열, 회로
BC856ALT1,BLT1 BC857ALT1,BLT1 BC858ALT1,BLT1,CLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µA, VCE = –5.0 V)
BC856A, BC857A, BC585A
BC856A, BC857A, BC858A
BC858C
hFE — 90 — —
— 150 —
— 270 —
(IC = –2.0 mA, VCE = –5.0 V) BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC858C
Collector – Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
Base – Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
Base – Emitter On Voltage
(IC = –2.0 mA, VCE = –5.0 V)
(IC = –10 mA, VCE = –5.0 V)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 V, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)
VCE(sat)
VBE(sat)
VBE(on)
125
220
420
–0.6
180 250
290 475
520 800
— –0.3
— –0.65
–0.7 —
–0.9 —
— –0.75
— –0.82
V
V
V
fT
100 —
— MHz
Cob — — 4.5 pF
NF — — 10 dB
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–155




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BC858BLT1 transistor

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