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PDF BC857BLT1 Data sheet ( Hoja de datos )
| Número de pieza | BC857BLT1 | |
| Descripción | General Purpose Transistors | |
| Fabricantes | Motorola Inc | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
PNP Silicon
COLLECTOR
3
1
BASE
BC856ALT1,BLT1
BC857ALT1,BLT1
BC858ALT1,BLT1,
CLT1
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol BC856 BC857 BC858 Unit
Collector – Emitter Voltage
Collector – Base Voltage
VCEO
–65
–45
–30
VCBO
–80
–50
–30
V
V
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VEBO
IC
–5.0
–100
–5.0
–100
–5.0
–100
V
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F;
BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L
Motorola Preferred Devices
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)CEO
–65
–45
–30
—
—
—
—
—
—
V
Collector – Emitter Breakdown Voltage
(IC = –10 µA, VEB = 0)
BC856 Series
BC857 Series
BC858 Series
V(BR)CES
–80
–50
–30
—
—
—
—
—
—
V
Collector – Base Breakdown Voltage
(IC = –10 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)CBO
–80
–50
–30
—
—
—
—
—
—
V
Emitter – Base Breakdown Voltage
(IE = –1.0 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)EBO
–5.0
–5.0
–5.0
—
—
—
—
—
—
V
Collector Cutoff Current (VCB = –30 V)
Collector Cutoff Current (VCB = –30 V, TA = 150°C)
ICBO — — –15 nA
— — –4.0 µA
1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2–154
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1 page  
BC856ALT1,BLT1 BC857ALT1,BLT1 BC858ALT1,BLT1,CLT1
1.0
0.7
0.5 D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.05
SINGLE PULSE
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
0.1
0.2
0.5 1.0 2.0
5.0 10
20 50 100 200
t, TIME (ms)
Figure 13. Thermal Response
ZθJC(t) = r(t) RθJC
RθJC = 83.3°C/W MAX
ZθJA(t) = r(t) RθJA
RθJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
500 1.0 k 2.0 k
5.0 k 10 k
–200
1 s 3 ms
–100
–50 TA = 25°C TJ = 25°C
BC558
–10
BC557
BC556
–5.0
–2.0
–1.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–5.0 –10
–30 –45 –65 –100
VCE, COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from
the data in Figure 13. At high case or ambient temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by the secondary breakdown.
2–158
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BC857BLT1.PDF ] | |
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