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Micro Commercial Components |
MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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$
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Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Ideally Suited for Automatic Insertion
150oC Junction Temperature
For Switching and AF Amplifier Applications
• Halogen free available upon request by adding suffix "-HF"
Mechanical Data
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.008 grams ( approx.)
Type
BC856A
BC856B
BC857A
BC857B
Marking Code (Note 2)
Marking
Type
3A BC857C
3B BC858A
3E BC858B
3F BC858C
Marking
3G
3J
3K
3L
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
BC856
BC857 VCBO
BC858
BC856
BC857 VCEO
BC858
VEBO
Value
-80
-50
-30
-65
-45
-30
-5.0
Collector Current
IC -100
Peak Collector Current
ICM -200
Peak Emitter Current
Power Dissipation@Ts=50oC(Note1)
IEM
Pd
-200
200
Operating & Storage Temperature Tj, TSTG -55~150
Unit
V
V
V
mA
mA
mA
mW
oC
Note: 1. Package mounted on ceramic substrate 0.7mm X 2.5cm2 area.
2. Current gain subgroup “ C” is not available for BC856
BC856A
THRU
BC858C
PNP Small
Signal Transistor
310mW
SOT-23
A
D
C
CB
FE
BE
G HJ
K
DIMENSIONS
INCHES
MM
DIM MIN
MAX MIN MAX
A .110 .120 2.80 3.04
B .083 .104 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G
.0005
.0039
.013
.100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: C
www.mccsemi.com
1 of 3
2013/01/01
BC856A thru BC858C
Electrical Characteristics @ TA =25°C unless otherwise specified
MCC
TM
Micro Commercial Components
Characteristic
Symbol Min Typ
Collector-Base Breakdown Voltage (Note 3)
BC856
-80
BC857 V(BR)CBO -50
BC858
-30
—
—
—
Collector-Emitter Breakdown Voltage (Note 3)
BC856
-65
BC857 V(BR)CEO -45
BC858
-30
—
—
—
Emitter-Base Breakdown Voltage (Note 3)
V(BR)EBO -5
—
H-Parameters
Small Signal Current Gain
Current Gain Group A hfe — 200
B hfe — 330
C hfe — 600
Input Impedance
Current Gain Group A hie — 2.7
B hie — 4.5
C hie — 8.7
Output Admittance
Current Gain Group A hoe — 18
B hoe — 30
C hoe — 60
Reverse Voltage Transfer Ratio Current Gain Group A hre — 1.5x10-4
B hre — 2x10-4
C hre — 3x10-4
DC Current Gain (Note 3)
Current Gain Group A
125 180
B hFE 220 290
C 420 520
Thermal Resistance, Junction to Substrate Backside
RqJSB
—
—
Thermal Resistance, Junction to Ambient
RqJA
—
—
Collector-Emitter Saturation Voltage (Note 3)
VCE(SAT) —
-75
-250
Base-Emitter Saturation Voltage (Note 3)
VBE(SAT)
—
—
-700
-850
Base-Emitter Voltage (Note 3)
VBE(ON)
-600
—
-650
—
Collector-Cutoff Current (Note 3)
BC856
BC857
BC858
ICES
ICES
ICES
ICBO
ICBO
—
—
—
—
—
—
—
—
—
—
Gain Bandwidth Product
fT 100 200
Collector-Base Capacitance
CCBO
—
3
Noise Figure
NF —
2
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
250
475
800
320
625
-300
-650
—
-750
-820
-15
-15
-15
-15
-4.0
—
—
10
Unit
Test Condition
V IC = 10mA, IB = 0
V IC = 10mA, IB = 0
V IE = 1mA, IC = 0
—
—
—
kW
kW VCE = -5.0V, IC = -2.0mA,
kW f = 1.0kHz
µS
µS
µS
—
—
—
— VCE = -5.0V, IC = -2.0mA
°C/W
°C/W
mV
mV
mV
nA
nA
nA
nA
µA
Note 1
Note 1
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
VCE = -80V
VCE = -50V
VCE = -30V
VCB = -30V
VCB = -30V, TA = 150°C
MHz
VCE = -5.0V, IC = -10mA,
f = 100MHz
pF VCB = -10V, f = 1.0MHz
VCE = -5.0V, IC = 200µA,
dB RS = 2kW, f = 1kHz,
Df = 200Hz
Notes:
1. Package mounted on ceramic substrate 0.7mm x 2.5cm2 area.
2. Current gain subgroup “C” is not available for BC856.
3. Short duration pulse test to minimize self-heating effect.
Revision: C
www.mccsemi.com
2 of 3
2013/01/01
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