파트넘버.co.kr BC857 데이터시트 PDF


BC857 반도체 회로 부품 판매점

SMALL SIGNAL PNP TRANSISTORS



STMicroelectronics 로고
STMicroelectronics
BC857 데이터시트, 핀배열, 회로
BC857
BC858
SMALL SIGNAL PNP TRANSISTORS
Type
BC857A
BC857B
BC858A
BC858B
Marking
3E
3F
3J
3K
s SILICON EPITAXIAL PLANAR PNP
TRANSISTORS
s MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s VERY LOW NOISE AF AMPLIFIER
s NPN COMPLEMENTS FOR BC857 IS BC847
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l
Parameter
VCES
V CBO
V CEO
V EBO
IC
ICM
IBM
IEM
Ptot
Tstg
Tj
Collector-Emit ter Voltage (VBE = 0)
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Peak Current
Emitter Peak Current
Total Dissipation at Tc = 25 oC
Storage Temperature
Max. O perating Junction Temperature
October 1997
Value
BC857
BC858
-50 -30
-50 -30
-45 -30
-5
-0.1
-0.2
-0.2
-0.2
300
-65 to 150
150
Uni t
V
V
V
V
A
A
A
A
mW
oC
oC
1/5


BC857 데이터시트, 핀배열, 회로
BC857/BC858
THERMAL DATA
Rthj-amb Thermal Resistance Junction-Ambient
Rth j-SR Thermal Resistance Junction-Substrat e
Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm
Max
Max
420
330
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCE = -30 V
VCE = -30 V Ta mb = 150 oC
V(BR)CES Collect or-Emitter
Breakdown Voltage
(VBE = 0)
IC = -10 µA
for BC857
for BC858
V( BR)CBO Collect or-Base
Breakdown Voltage
(IE = 0)
IC = -10 µA
for BC857
for BC858
V( BR)CEO Collect or-Emitter
Breakdown Voltage
(IB = 0)
V(BR)EBO
Em it t er -Base
Breakdown Voltage
(IC = 0)
VCE(sat)Collect or-Emitter
Saturation Voltage
IC = -2 mA
for BC857
for BC858
IC = -10 µA
for BC857
for BC858
IC = -10 mA
IC = -100 mA
IB = -0.5 mA
IB = -5 mA
VBE(s at)Base-Emitt er
Saturation Voltage
IC = -10 mA IB = -0.5 mA
IC = -100 mA IB = -5 mA
VBE(on)Base-Emitt er O n
Voltage
IC = -2 mA VCE = -5 V
IC = -10 mA VCE = -5 V
hFE DC Current G ain
IC = -10 µA
for group A
for group B
IC = -2 mA
for group A
for group B
VCE = -5 V
VCE = -5 V
fT Transit ion F requency IC = -10 mA VCE = -5 V f = 100MHz
CCB Collect or Base
Capacitance
IE = 0 VCB = -10 V f = 1 MHz
NF Noise Figure
VCE = -5 V IC = -0.2 mA f = 1KHz
f = 200 Hz RG = 2 K
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
Min.
-50
-30
-50
-30
-45
-30
-6
-5
-0.6
110
200
Typ .
-0.09
-0.25
-0.75
-0.9
-0.66
-0.72
90
150
180
290
150
2
1.2
M a x.
-15
-5
-0.3
-0.65
-0.75
-0.82
220
450
6
10
4
Unit
nA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
MHz
pF
dB
dB
2/5




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BC857 transistor

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