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PDF BC856BLT3 Data sheet ( Hoja de datos )
| Número de pieza | BC856BLT3 | |
| Descripción | General Purpose Transistors | |
| Fabricantes | ON Semiconductor | |
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BC856ALT1 Series
Preferred Devices
General Purpose
Transistors
PNP Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector-Emitter Voltage
BC856
BC857
BC858, BC859
VCEO
−65
−45
−30
V
Collector-Base Voltage
BC856
BC857
BC858, BC859
VCBO
−80
−50
−30
V
Emitter−Base Voltage
VEBO
−5.0
V
Collector Current − Continuous
IC −100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA 417 °C/W
Junction and Storage Temperature
TJ, Tstg
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
−55 to
+150
°C
http://onsemi.com
1
BASE
COLLECTOR
3
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
3
xxM
12
xx = Device Code
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 8
1
Publication Order Number:
BC856ALT1/D
1 page  
BC856ALT1 Series
1.0
0.7
0.5 D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.05
0.01
0.1
0.2
0.5
SINGLE PULSE
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1.0 2.0
5.0 10 20
50 100
t, TIME (ms)
Figure 13. Thermal Response
200
ZqJC(t) = r(t) RqJC
RqJC = 83.3°C/W MAX
ZqJA(t) = r(t) RqJA
RqJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
500 1.0 k 2.0 k
5.0 k 10 k
−200
−100
−50
−10
−5.0
−2.0
−1.0
1s
TA = 25°C TJ = 25°C
3 ms
BC558, BC559
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The safe operating area curves indicate IC−VCE limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk)
may be calculated from the data in Figure 13. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by the secondary breakdown.
−5.0 −10
−30 −45 −65 −100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
http://onsemi.com
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| PDF Descargar | [ Datasheet BC856BLT3.PDF ] | |
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