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BC856BDW1T1 반도체 회로 부품 판매점

Dual General Purpose Transistors



ON Semiconductor 로고
ON Semiconductor
BC856BDW1T1 데이터시트, 핀배열, 회로
BC856BDW1T1,
BC857BDW1T1 Series,
BC858BDW1T1 Series
Preferred Devices
Dual General Purpose
Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Device Marking:
BC856BDW1T1 = 3B
BC857BDW1T1 = 3F
BC857CDW1T1 = 3G
BC858BDW1T1 = 3K
BC858CDW1T1 = 3L
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current −
Continuous
Symbol BC856 BC857 BC858 Unit
VCEO
VCBO
VEBO
IC
−65
−80
−5.0
−100
−45
−50
−5.0
−100
−30
−30
−5.0
−100
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
Per Device
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C
PD
Thermal Resistance,
Junction to Ambient
RqJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR−5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
−55 to +150
Unit
mW
mW/°C
°C/W
°C
http://onsemi.com
(3)
Q1
(4)
(2)
(5)
(1)
Q2
(6)
6 54
1
23
SOT−363/SC−88
CASE 419B
Style 1
DEVICE MARKING
3xm
See Table
3x = Specific Device Code
x = B, F, G, K, L
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
BC856BDW1T1 SOT−363 3000 Units/Reel
BC857BDW1T1 SOT−363 3000 Units/Reel
BC857CDW1T1 SOT−363 3000 Units/Reel
BC858BDW1T1 SOT−363 3000 Units/Reel
BC858CDW1T1 SOT−363 3000 Units/Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 3
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
BC856BDW1T1/D


BC856BDW1T1 데이터시트, 핀배열, 회로
BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
BC856 Series
BC857 Series
BC858 Series
Collector −Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
BC856 Series
BC857B Only
BC858 Series
Collector −Base Breakdown Voltage
(IC = −10 mA)
BC856 Series
BC857 Series
BC858 Series
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
BC856 Series
BC857 Series
BC858 Series
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
BC856B, BC857B, BC858B
BC857C, BC858C
(IC = −2.0 mA, VCE = −5.0 V) BC856B, BC857B, BC858B
BC857C, BC858C
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
NF
Min
−65
−45
−30
−80
−50
−30
−80
−50
−30
−5.0
−5.0
−5.0
220
420
−0.6
100
Typ Max Unit
V
−−
−−
−−
V
−−
−−
−−
V
−−
−−
−−
V
−−
−−
−−
− −15 nA
− −4.0 mA
150 −
270 −
290 475
520 800
− −0.3
− −0.65
−0.7 −
−0.9 −
− −0.75
− −0.82
V
V
V
− − MHz
− 4.5 pF
− 10 dB
http://onsemi.com
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