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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BC856T; BC857T
PNP general purpose transistors
Product specification
Supersedes data of 1997 Jul 07
1999 Apr 26
Philips Semiconductors
PNP general purpose transistors
Product specification
BC856T; BC857T
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification especially
in portable equipment.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in an SC-75 plastic package.
NPN complements: BC846T and BC847T.
MARKING
TYPE
NUMBER
BC856AT
BC856BT
BC857AT
MARKING
CODE
3A
3B
3E
TYPE
NUMBER
BC857BT
BC857CT
MARKING
CODE
3F
3G
handbook, halfpage
3
1
Top view
2
3
1
2
MAM362
Fig.1 Simplified outline (SC-75) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BC856AT; BC856BT
BC857AT; BC857BT; BC857CT
collector-emitter voltage
BC856AT; BC856BT
BC857AT; BC857BT; BC857CT
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
− −80 V
− −50 V
− −65 V
− −45 V
− −5 V
− −100 mA
− −200 mA
− −100 mA
− 150 mW
−65 +150 °C
− 150 °C
−65 +150 °C
1999 Apr 26
2
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