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BC850W 반도체 회로 부품 판매점

PNP Silicon AF Transistors



Infineon Technologies AG 로고
Infineon Technologies AG
BC850W 데이터시트, 핀배열, 회로
PNP Silicon AF Transistors
BC856W...BC860W
 For AF input stages and driver applications
 High current gain
 Low collector-emitter saturation voltage
 Low noise between 30 Hz and 15 kHz
 Complementary types:
BC846W, BC847W, BC848W
BC849W, BC850W (NPN)
3
2
1
VSO05561
Type
BC856AW
BC856BW
BC857AW
BC857BW
BC857CW
BC858AW
BC858BW
BC858CW
BC859AW
BC859BW
BC859CW
BC860BW
BC860CW
Marking
3As
3Bs
3Es
3Fs
3Gs
3Js
3Ks
3Ls
4As
4Bs
4Cs
4Fs
4Gs
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
1 Dec-11-2001


BC850W 데이터시트, 핀배열, 회로
BC856W...BC860W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Peak base current
Peak emitter current
Total power dissipation, TS = 124 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VCES
VEBO
IC
ICM
IBM
IEM
Ptot
Tj
Tstg
BC856W BC857W BC858W Unit
BC860W BC859W
65 45 30 V
80 50 30
80 50 30
5 55
100 mA
200 mA
200
200
250 mW
150 °C
-65 ... 150
RthJS
105
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0
BC856W
BC857/860W
65
45
-
-
V
-
-
BC858/859W
30 -
-
Collector-base breakdown voltage
IC = 10 µA, IE = 0
BC856W
V(BR)CBO
BC857/860W
BC858/859W
80
50
30
-
-
-
-
-
-
1For calculation of RthJA please refer to Application Note Thermal Resistance
2 Dec-11-2001




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제조업체: Infineon Technologies AG

( infineon )

BC850W transistor

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