|
Infineon Technologies AG |
PNP Silicon AF Transistors
BC856W...BC860W
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types:
BC846W, BC847W, BC848W
BC849W, BC850W (NPN)
3
2
1
VSO05561
Type
BC856AW
BC856BW
BC857AW
BC857BW
BC857CW
BC858AW
BC858BW
BC858CW
BC859AW
BC859BW
BC859CW
BC860BW
BC860CW
Marking
3As
3Bs
3Es
3Fs
3Gs
3Js
3Ks
3Ls
4As
4Bs
4Cs
4Fs
4Gs
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
1 Dec-11-2001
BC856W...BC860W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Peak base current
Peak emitter current
Total power dissipation, TS = 124 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VCES
VEBO
IC
ICM
IBM
IEM
Ptot
Tj
Tstg
BC856W BC857W BC858W Unit
BC860W BC859W
65 45 30 V
80 50 30
80 50 30
5 55
100 mA
200 mA
200
200
250 mW
150 °C
-65 ... 150
RthJS
105
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0
BC856W
BC857/860W
65
45
-
-
V
-
-
BC858/859W
30 -
-
Collector-base breakdown voltage
IC = 10 µA, IE = 0
BC856W
V(BR)CBO
BC857/860W
BC858/859W
80
50
30
-
-
-
-
-
-
1For calculation of RthJA please refer to Application Note Thermal Resistance
2 Dec-11-2001
|