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Diotec Semiconductor |
BC 846W ... BC 850W
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
2±0.1
0.3 3
Type
Code
12
1.3
1±0.1
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
200 mW
SOT-323
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
VCE0
VCB0
VEB0
Ptot
IC
ICM
IBM
- IEM
Tj
TS
Grenzwerte (TA = 25/C)
BC 846W BC 847W BC 848W
BC 850W BC 849W
65 V 45 V 30 V
80 V 50 V 30 V
6V 5V
200 mW 1)
100 mA
200 mA
200 mA
200 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 5 V, IC = 10 :A
VCE = 5 V, IC = 2 mA
h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz
Small signal current gain – Stromverstärkung
Input impedance – Eingangs-Impedanz
Output admittance – Ausgangs-Leitwert
Reverse voltage transfer ratio
Spannungsrückwirkung
hFE
hFE
hfe
hie
hoe
hre
Group A
Kennwerte (Tj = 25/C)
Group B
Group C
typ. 90
110...220
typ. 150
200...450
typ. 270
420...800
typ. 220
1.6...4.5 kS
18 < 30 :S
typ.1.5 *10-4
typ. 330
3.2...8.5 kS
30 < 60 :S
typ. 2 *10-4
typ. 600
6...15 kS
60 < 110 :S
typ. 3 *10-4
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
12 01.11.2003
General Purpose Transistors
BC 846W ... BC 850W
Characteristics (Tj = 25/C)
Collector saturation volt. – Kollektor-Sättigungsspannung 1)
IC = 10 mA, IB = 0.5 mA
VCEsat
IC = 100 mA, IB = 5 mA
VCEsat
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VBEsat
VBEsat
VCE = 5 V, IC = 2 mA
VBEon
VCE = 5 V, IC = 10 mA
VBEon
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 30 V
IE = 0, VCB = 30 V, Tj = 150/C
Emitter-Base cutoff current – Emitterreststrom
ICB0
ICB0
IC = 0, VEB = 5 V
Gain-Bandwidth Product – Transitfrequenz
IEB0
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
CEB0
VCE = 5 V, IC = 200 :A
RG = 2 kS, f = 1 kHz,
)f = 200 Hz
BC 846W...
BC 848W
F
BC 849W...
BC 850W
F
VCE = 5 V, IC = 200 :A
RG = 2 kS, f = 1 kHz,
f = 30 ... 15000 Hz
BC 849W
BC 850W
F
F
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Min.
Kennwerte (Tj = 25/C)
Typ.
Max.
–
90 mV
250 mV
–
200 mV
600 mV
– 700 mV –
– 900 mV –
580 mV
–
660 mV
–
700 mV
770 mV
– – 15 nA
– – 5 :A
– – 100 nA
100 MHz
–
–
3.5 pF
6 pF
– 9 pF –
– 2 dB 10 dB
1.2 dB
4 dB
–
1.4 dB
4 dB
–
1.4 dB
4 dB
RthA 620 K/W 2)
BC 856W ... BC 860W
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstärkungsgruppen pro Typ
BC 846AW = 1A
BC 847AW = 1E
BC 848AW = 1J
BC 846BW = 1B
BC 847BW = 1F
BC 848BW = 1K
BC 849BW = 2B
BC 850BW = 2F
BC 847CW = 1G
BC 848CW = 1L
BC 849CW = 2C
BC 850CW = 2G
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
13
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