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PDF BC848CDW1T1 Data sheet ( Hoja de datos )
| Número de pieza | BC848CDW1T1 | |
| Descripción | Dual General Purpose Transistors | |
| Fabricantes | ON Semiconductor | |
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BC846BDW1T1,
BC847BDW1T1,
BC848CDW1T1
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
• Device Marking:
BC846BDW1T1 = 1B
BC847BDW1T1 = 1F
BC848CDW1T1 = 1L
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol BC846 BC847 BC848 Unit
Collector −Emitter Voltage
VCEO
65
45
30
V
Collector −Base Voltage
VCBO
80
50
30
V
Emitter −Base Voltage
VEBO
6.0
6.0
5.0
V
Collector Current −
Continuous
IC 100 100 100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
Per Device
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C
PD
Thermal Resistance,
Junction−to−Ambient
RqJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR−5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
−55 to +150
Unit
mW
mW/°C
°C/W
°C
http://onsemi.com
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
DIAGRAM
MARKING
6
1
SOT−363
CASE 419B
STYLE 1
1xm
1x = Specific Device Code
x = B, F, L
m = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
BC846BDW1T1 SOT−363 3000 Units/Reel
BC847BDW1T1 SOT−363 3000 Units/Reel
BC847BDW1T1G SOT−363
(Pb−Free)
BC848CDW1T1 SOT−363
3000 Units/Reel
3000 Units/Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 3
1
Publication Order Number:
BC846BDW1T1/D
1 page  
BC846BDW1T1, BC847BDW1T1, BC848CDW1T1
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
SINGLE PULSE
0.001
0 1.0
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
ZqJA(t) = r(t) RqJA
RqJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
10
100
1.0 k
10 k
100 k
1.0 M
t, TIME (ms)
Figure 13. Thermal Response
−200
1 s 3 ms
−100
−50 TA = 25°C TJ = 25°C
BC558
−10
BC557
BC556
−5.0
−2.0
−1.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−5.0 −10
−30 −45 −65 −100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
The safe operating area curves indicate IC−VCE limits
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided TJ(pk) ≤
150°C. TJ(pk) may be calculated from the data in
Figure 13. At high case or ambient temperatures,
thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by the
secondary breakdown.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BC848CDW1T1.PDF ] | |
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