파트넘버.co.kr BC848B 데이터시트 PDF


BC848B 반도체 회로 부품 판매점

NPN General Purpose Transistor



ROHM Semiconductor 로고
ROHM Semiconductor
BC848B 데이터시트, 핀배열, 회로
Transistors
BC848BW / BC848B
NPN General Purpose Transistor
BC848BW / BC848B
zFeatures
1) BVCEO minimum is 30V (IC=1mA)
2) Complements the BC858B / BC858BW.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Collector power BC848BW
dissipation
BC848B
PC
Junction temperature
Tj
Storage temperature
Tstg
When mounted on a 7×5×0.6mm ceramic board.
Limits
30
30
5
0.1
0.2
0.2
0.35
150
65~+150
Unit
V
V
V
A
W
W
W
°C
°C
zExternal dimensions (Unit : mm)
BC848BW
SOT-323
ROHM : UMT3
EIAJ : SC-70
2.0±0.2
1.3±0.1
0.65 0.65
(1) (2)
0.9±0.1
0.2 0.7±0.1
(3)
0.3
+0.1
0
0.15±0.05
All terminals have same dimensions
0~0.1
(1) Emitter
(2) Base
(3) Collector
BC848B, BC848C
SOT-23
2.9±0.2
1.9±0.2
0.95 0.95
0.95
+0.2
0.1
0.45±0.1
(1) (2)
(3)
0~0.1
0.2Min.
ROHM : SST3
0.4
+0.1
0.05
0.15−+00..016
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
VCE(sat)
VBE(on)
hFE
fT
Cob
Cib
Min.
30
30
5
0.58
200
Typ.
200
3
8
Max.
100
5
0.25
0.6
0.77
450
Unit
Conditions
V IC=50µA
V IC=1mA
V IE=50µA
nA VCB=30V
µA VCB=30V, Ta=150°C
IC/IB=10mA/0.5mA
V
IC/IB=100mA/5mA
V VCE/IC=5V/10mA
VCE/IC=5V/2mA
MHz VCE=5V, IE=−20mA, f=100MHz
pF VCB=10V, IE=0, f=1MHz
pF VEB=0.5V, IE=0, f=1MHz
(SPEC-C22)
Rev.A
1/5


BC848B 데이터시트, 핀배열, 회로
Transistors
zPackaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
BC848BW
UMT3
G1K
T106
3000
BC848B
SST3
G1K
T116
3000
BC848BW / BC848B
zElectrical characteristic curves
100
Ta=25°C
80
60
1.2
1.0
0.8
0.6
0.4
0.2
40
0.1
20
IB=0mA
0
0 1.0 2.0
VCECOLLECTOR-EMITTER VOLTAGE (V)
Fig.1 Grounded emitter output
characteristics ( )
10.0
35
30
8.0
25
6.0
20
15
4.0
10
2.0
5
IB=0µA Ta=25°C
0
0 1.0 2.0
VCE-COLLECTOR-EMITTER VOLTAGE (V)
Fig.2 Grounded emitter output
characteristics ( )
1000
100
Ta=25°C
VCE=10V
1V 5V
10
0.1
1.0 10 100
IC-COLLECTOR CURRENT (mA)
1000
Fig.3 DC current gain vs. collector current ( )
1000
Ta=125°C
Ta=25°C
Ta=−55°C
100
VCE=5V
10
0.1
1.0 10 100
IC-COLLECTOR CURRENT (mA)
1000
Fig.4 DC current gain vs. collector current ( )
Rev.A
2/5




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( rohm )

BC848B transistor

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