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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BC847BPN
NPN/PNP general purpose
transistor
Preliminary specification
Supersedes data of 1997 Jul 09
1999 Apr 26
Philips Semiconductors
NPN/PNP general purpose transistor
Preliminary specification
BC847BPN
FEATURES
• Low collector capacitance
• Low collector-emitter saturation voltage
• Closely matched current gain
• Reduces number of components and boardspace
• No mutual interference between the transistors.
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN/PNP transistor pair in an SC-88; SOT363 plastic
package.
MARKING
TYPE NUMBER
BC847BPN
MARKING CODE
13t
handbook, halfpage
65
4
12
Top view
3
65 4
TR2
TR1
123
MAM341
Fig.1 Simplified outline (SC-88; SOT363)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
Per device
Ptot total power dissipation
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
− 50 V
− 45 V
−5V
− 100 mA
− 200 mA
− 200 mA
− 200 mW
−65
+150
°C
− 150 °C
−65
+150
°C
− 300 mW
1999 Apr 26
2
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