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BC847BPN 반도체 회로 부품 판매점

NPN/PNP general purpose transistor



NXP Semiconductors 로고
NXP Semiconductors
BC847BPN 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BC847BPN
NPN/PNP general purpose
transistor
Preliminary specification
Supersedes data of 1997 Jul 09
1999 Apr 26


BC847BPN 데이터시트, 핀배열, 회로
Philips Semiconductors
NPN/PNP general purpose transistor
Preliminary specification
BC847BPN
FEATURES
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and boardspace
No mutual interference between the transistors.
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN/PNP transistor pair in an SC-88; SOT363 plastic
package.
MARKING
TYPE NUMBER
BC847BPN
MARKING CODE
13t
handbook, halfpage
65
4
12
Top view
3
65 4
TR2
TR1
123
MAM341
Fig.1 Simplified outline (SC-88; SOT363)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C
Per device
Ptot total power dissipation
Tamb 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
50 V
45 V
5V
100 mA
200 mA
200 mA
200 mW
65
+150
°C
150 °C
65
+150
°C
300 mW
1999 Apr 26
2




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