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General Purpose Transistors(NPN Silicon)



ON Semiconductor 로고
ON Semiconductor
BC847BLT1 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC846ALT1/D
General Purpose Transistors
NPN Silicon
COLLECTOR
3
1
BASE
BC846ALT1,BLT1
BC847ALT1,
BLT1,CLT1 thru
BC850BLT1,CLT1
2
EMITTER
MAXIMUM RATINGS
Rating
BC847 BC848
Symbol BC846 BC850 BC849
Unit
Collector – Emitter Voltage
VCEO
65
45
30
V
Collector – Base Voltage
VCBO
80
50
30
V
Emitter – Base Voltage
VEBO
6.0
6.0
5.0
V
Collector Current — Continuous
IC 100 100 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
BC846, BC847 and BC848 are
Motorola Preferred Devices
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC846A,B
(IC = 10 mA)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)CEO 65 — —
45 — —
30 — —
V
Collector – Emitter Breakdown Voltage BC846A,B
(IC = 10 µA, VEB = 0)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)CES 80 — —
50 — —
30 — —
V
Collector – Base Breakdown Voltage
(IC = 10 mA)
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)CBO 80 — —
50 — —
30 — —
V
Emitter – Base Breakdown Voltage BC846A,B
V(BR)EBO 6.0 — —
V
(IE = 1.0 mA)
BC847A,B,C
6.0 — —
BC848A,B,C, BC849B,C, BC850B,C
5.0 — —
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO
— 15 nA
— 5.0 µA
1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1


BC847BLT1 데이터시트, 핀배열, 회로
BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
hFE
Min
(IC = 2.0 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B, BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base – Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base – Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 k,
f = 1.0 kHz, BW = 200 Hz)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC849B,C, BC850B,C
VCE(sat)
VBE(sat)
VBE(on)
110
200
420
580
fT
Cobo
NF
100
Typ
90
150
270
180
290
520
0.7
0.9
660
Max Unit
——
220
450
800
0.25 V
0.6
—V
700 mV
770
— MHz
4.5 pF
dB
10
4.0
2.0
1.5
VCE = 10 V
TA = 25°C
1.0
0.8
0.6
0.4
0.3
0.2
0.2
0.5 1.0 2.0 5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
1.0
0.9 TA = 25°C
0.8 VBE(sat) @ IC/IB = 10
0.7
0.6 VBE(on) @ VCE = 10 V
0.5
0.4
0.3
0.2
0.1 VCE(sat) @ IC/IB = 10
0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC = IC = IC = 50 mA
IC = 100 mA
10 mA 20 mA
0.8
0.4
1.0
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0
0.02
0.1 1.0
IB, BASE CURRENT (mA)
10 20
Figure 3. Collector Saturation Region
0.2 1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data




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