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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC846ALT1/D
General Purpose Transistors
NPN Silicon
COLLECTOR
3
1
BASE
BC846ALT1,BLT1
BC847ALT1,
BLT1,CLT1 thru
BC850BLT1,CLT1
2
EMITTER
MAXIMUM RATINGS
Rating
BC847 BC848
Symbol BC846 BC850 BC849
Unit
Collector – Emitter Voltage
VCEO
65
45
30
V
Collector – Base Voltage
VCBO
80
50
30
V
Emitter – Base Voltage
VEBO
6.0
6.0
5.0
V
Collector Current — Continuous
IC 100 100 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
BC846, BC847 and BC848 are
Motorola Preferred Devices
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC846A,B
(IC = 10 mA)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)CEO 65 — —
45 — —
30 — —
V
Collector – Emitter Breakdown Voltage BC846A,B
(IC = 10 µA, VEB = 0)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)CES 80 — —
50 — —
30 — —
V
Collector – Base Breakdown Voltage
(IC = 10 mA)
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)CBO 80 — —
50 — —
30 — —
V
Emitter – Base Breakdown Voltage BC846A,B
V(BR)EBO 6.0 — —
V
(IE = 1.0 mA)
BC847A,B,C
6.0 — —
BC848A,B,C, BC849B,C, BC850B,C
5.0 — —
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO
—
—
— 15 nA
— 5.0 µA
1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1
BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
hFE
Min
—
—
—
(IC = 2.0 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B, BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base – Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base – Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC849B,C, BC850B,C
VCE(sat)
VBE(sat)
VBE(on)
110
200
420
—
—
—
—
580
—
fT
Cobo
NF
100
—
—
—
Typ
90
150
270
180
290
520
—
—
0.7
0.9
660
—
—
—
—
—
Max Unit
——
—
—
220
450
800
0.25 V
0.6
—V
—
700 mV
770
— MHz
4.5 pF
dB
10
4.0
2.0
1.5
VCE = 10 V
TA = 25°C
1.0
0.8
0.6
0.4
0.3
0.2
0.2
0.5 1.0 2.0 5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
1.0
0.9 TA = 25°C
0.8 VBE(sat) @ IC/IB = 10
0.7
0.6 VBE(on) @ VCE = 10 V
0.5
0.4
0.3
0.2
0.1 VCE(sat) @ IC/IB = 10
0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC = IC = IC = 50 mA
IC = 100 mA
10 mA 20 mA
0.8
0.4
1.0
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0
0.02
0.1 1.0
IB, BASE CURRENT (mA)
10 20
Figure 3. Collector Saturation Region
0.2 1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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