파트넘버.co.kr BC847BDW1T1 데이터시트 PDF


BC847BDW1T1 반도체 회로 부품 판매점

Dual General Purpose Transistors



ON Semiconductor 로고
ON Semiconductor
BC847BDW1T1 데이터시트, 핀배열, 회로
BC846BDW1T1,
BC847BDW1T1,
BC848CDW1T1
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Device Marking:
BC846BDW1T1 = 1B
BC847BDW1T1 = 1F
BC848CDW1T1 = 1L
Features
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol BC846 BC847 BC848 Unit
Collector −Emitter Voltage
VCEO
65
45
30
V
Collector −Base Voltage
VCBO
80
50
30
V
Emitter −Base Voltage
VEBO
6.0
6.0
5.0
V
Collector Current −
Continuous
IC 100 100 100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
Per Device
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C
PD
Thermal Resistance,
Junction−to−Ambient
RqJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR−5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
−55 to +150
Unit
mW
mW/°C
°C/W
°C
http://onsemi.com
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
DIAGRAM
MARKING
6
1
SOT−363
CASE 419B
STYLE 1
1xm
1x = Specific Device Code
x = B, F, L
m = Date Code
ORDERING INFORMATION
Device
Package
Shipping
BC846BDW1T1 SOT−363 3000 Units/Reel
BC847BDW1T1 SOT−363 3000 Units/Reel
BC847BDW1T1G SOT−363
(Pb−Free)
BC848CDW1T1 SOT−363
3000 Units/Reel
3000 Units/Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 3
1
Publication Order Number:
BC846BDW1T1/D


BC847BDW1T1 데이터시트, 핀배열, 회로
BC846BDW1T1, BC847BDW1T1, BC848CDW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC846
BC847
BC848
V(BR)CEO
V
65 −
45 −
30 −
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846
BC847
BC848
V(BR)CES
V
80 −
50 −
30 −
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846
BC847
BC848
V(BR)CBO
V
80 −
50 −
30 −
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846
BC847
BC848
V(BR)EBO
V
6.0 −
6.0 −
5.0 −
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
ICBO − − 15 nA
− − 5.0 mA
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846B, BC847B
BC848C
hFE
− 150 −
− 270 −
(IC = 2.0 mA, VCE = 5.0 V)
BC846B, BC847B
BC848C
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
200 290 450
420 520 800
VCE(sat)
− 0.25 V
− 0.6
VBE(sat)
0.7
− 0.9 −
V
VBE(on)
580
660
700
mV
− − 770
fT 100 − − MHz
Cobo
NF
− 4.5 pF
dB
− 10
http://onsemi.com
2




PDF 파일 내의 페이지 : 총 6 페이지

제조업체: ON Semiconductor

( onsemi )

BC847BDW1T1 transistor

데이터시트 다운로드
:

[ BC847BDW1T1.PDF ]

[ BC847BDW1T1 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BC847BDW1T1

Dual General Purpose Transistors - ON Semiconductor



BC847BDW1T1G

Dual General Purpose Transistors - ON Semiconductor