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Infineon Technologies AG |
NPN Silicon AF Transistor Arrays
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated transistors
with good matching in one package
• BC846S / U, BC847S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BC846S/ BC846U/ BC847S
BC846S
BC846U
BC847S
C1 B2 E2
654
TR2
TR1
123
E1 B1 C2
EHA07178
Type
BC846S
BC846U
BC847S
Marking
Pin Configuration
Package
1Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1Cs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1 2012-04-04
BC846S/ BC846U/ BC847S
Maximum Ratings
Parameter
Collector-emitter voltage
BC846S/U
BC847S
Symbol
VCEO
Value
65
45
Collector-base voltage
BC846S/U
BC847S
VCBO
80
50
Emitter-base voltage
Collector current
Peak collector current, tp ≤ 10 ms
Total power dissipation-
TS ≤ 115 °C, BC846S, BC847S
TS ≤ 118 °C, BC846U
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BC846S, BC847S
BC847U
VEBO
IC
ICM
Ptot
Tj
Tstg
Symbol
RthJS
6
100
200
250
250
150
-65 ... 150
Value
≤ 140
≤ 130
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
2 2012-04-04
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