BC846PN 반도체 회로 부품 판매점
NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain)
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 Siemens Semiconductor Group |
NPN/PNP Silicon AF Transistor Array
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Tape loading orientation
BC 846PN
4
5
6
3
2
1 VPS05604
PIN Configuration
Type
Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C
BC 846PN 1Os
Q62702-C2537 SOT-363 PNP-Transistor 4 = E 5 = B 3 = C
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
65 V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient 1)
Junction - soldering point
VCBO
VCES
VEBO
IC
ICM
Ptot
Tj
Tstg
RthJA
RthJS
80
80
5
100
200
250
150
-65...+150
≤275
≤140
V
V
mA
mW
°C
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
SSeemmicicoonndduucctotor rGGrorouupp
11
Sep-109798-1-1919-081
BC 846PN
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics per Transistor
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
IC = 10 µA, VCE = 5 V
IC = 2 mA, VCE = 5 V
V(BR)CEO 65
-
-V
V(BR)CBO 80
-
-
V(BR)CES 80
-
-V
V(BR)EBO 5 - -
ICBO
- - 15 nA
ICBO
- - 5 µA
hFE -
- 250 -
200 290 450
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
mV
- 90 300
- 200 650
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
- 700 -
- 900 -
Base-emitter voltage 1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(ON)
V
580 660 750
- - 820
1) Pulse test: t < 300µs; D < 2%
SSeemmicicoonndduucctotor rGGrorouupp
22
Sep-109798-1-1919-081
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PDF 파일 내의 페이지 : 총 6 페이지
제조업체: Siemens Semiconductor Group
( siemens )
BC846PN transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
BC846PN
NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain) - Siemens Semiconductor Group
BC846PN
NPN/PNP Silicon AF Transistor Array - Infineon Technologies AG