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SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - JANUARY 1997
BC846
BC848
BC850
BC847
BC849
PARTMARKING DETAILS
BC846AZ1A BC848B1K
BC846B1B BC848CZ1L
BC847AZ1E BC849B2B
BC847B1F BC849C2C
BC847C1GZ BC850B2FZ
BC848A1JZ BC850C-Z2G
COMPLEMENTARY TYPES
BC846
BC856
BC847
BC857
BC848
BC858
BC849
BC859
BC850
BC860
E
C
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at Tamb=25°C
Operating and Storage
Temperature Range
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
IBM
IEM
Ptot
Tj:Tstg
BC846
80
80
65
BC847
50
50
45
6
BC848 BC849
30 30
30 30
30 30
5
100
200
200
200
330
-55 to +150
BC850
50
50
45
UNIT
V
V
V
V
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS.
Collector Cut-Off Current ICBO
Max
Max
Collector-Emitter
Saturation Voltage
VCE(sat) Typ
Max.
Typ
Max.
15 nA VCB = 30V
5 µA VCB = 30V
Tamb=150°C
90 mV IC=10mA,
250 mV IB=0.5mA
200 mV IC=100mA,
600 mV IB=5mA
Typ
Max.
300 mV IC=10mA*
600 mV
Base-Emitter
Saturation Voltage
Base-Emitter Voltage
VBE(sat) Typ
Typ
VBE Min
Typ
Max
700 mV IC=10mA,
IB=0.5mA
900 mV IC=100mA,
IB=5mA
580 mV IC=2mA
660 mV VCE=5V
700 mV
Max
770 mV IC=10mA
VCE=5V
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the
operating point IC= 11mA, VCE = 1V at constant base current.
ELECTRICAL CHARACTERISTICS (Continued)
BC846
BC848
BC850
BC847
BC849
PARAMETER
Static
Group VI
Forward
Current Ratio
Group A
Group B
Group C
Transition Frequency
Collector-Base
Capacitance
Emitter-Base
Capacitance
Noise Figure
Equivalent Noise
Voltage
SYMBOL
BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS.
hFE Min 75 75 75
Typ 110 110 110
Max 150 150 150
IC=2mA, VCE=5V
hFE Typ 90 90 90
Min 110 110 110
Typ 180 180 180
Max 220 220 220
IC=0.01mA, VCE=5V
IC=2mA, VCE=5V
Typ 120 120 120
hFE Typ
Min
Typ
Max
150
200
290
450
IC=100mA, VCE=5V
IC=0.01mA, VCE=5V
IC=2mA, VCE=5V
Typ 200 200 200
hFE Typ.
Min
Typ
Max
270 270 270 270
420 420 420 420
500 500 500 500
800 800 800 800
IC=100mA, VCE=5V
IC=0.01mA, VCE=5V
IC=2mA, VCE=5V
Typ 400
IC=100mA, VCE=5V
fT Typ 300 MHz IC=10mA, VCE=5V
f=100MHz
Cobo Typ
Max
2.5
4.5
pF VCB=10V f=1MHz
pF
Cib0 Typ
9
pF VEB=0.5V f=1MHz
N Typ 2 2 2 1.2 1 dB VCE = 5V, IC=200µA,
Max 10 10 10 4 4 dB RG=2kΩ, f=1kHz,
∆f=200Hz
Typ 1.2 1 dB VCE = 5V, IC=200µA,
Max 4 3 dB RG=2kΩ, f=30Hz to
15kHz at -3dB
points
en Max. 110 110 nV VCE= 5V, IC=200µA,
RG=2kΩ, f=10Hz to
50Hz at -3dB
points
Spice parameter data is available upon request for this device
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