파트넘버.co.kr BC846 데이터시트 PDF


BC846 반도체 회로 부품 판매점

Small Signal Transistors (NPN)



General Semiconductor 로고
General Semiconductor
BC846 데이터시트, 핀배열, 회로
BC846 THRU BC849
Small Signal Transistors (NPN)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
12
.037(0.95) .037(0.95)
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
FEATURES
NPN Silicon Epitaxial Planar Transistors
for switching and AF amplifier applications.
Especially suited for automatic insertion in
thick- and thin-film circuits.
These transistors are subdivided into three
groups A, B and C according to their current gain. The
type BC846 is available in groups A and B, however, the
types BC847 and BC848 can be supplied in all three
groups. The BC849 is a low noise type available in groups
B and C. As complementary types, the PNP transistors
BC856...BC859 are recommended.
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking code
Type
BC846A
B
BC847A
B
C
Marking
1A
1B
1E
1F
1G
Type
BC848A
B
C
BC849B
C
Marking
1J
1K
1L
2B
2C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at TSB = 50 °C
Junction Temperature
Storage Temperature Range
1) Device on fiberglass substrate, see layout
BC846
BC847
BC848, BC849
BC846
BC847
BC848, BC849
BC846
BC847
BC848, BC849
BC846, BC847
BC848, BC849
Symbol
VCBO
VCBO
VCBO
VCES
VCES
VCES
VCEO
VCEO
VCEO
VEBO
VEBO
IC
ICM
IBM
–IEM
Ptot
Tj
TS
Value
80
50
30
80
50
30
65
45
30
6
5
100
200
200
200
3101)
150
–65 to +150
Unit
V
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mW
°C
°C
5/98


BC846 데이터시트, 핀배열, 회로
BC846 THRU BC849
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
h-Parameters at VCE = 5 V, IC = 2 mA,
f = 1 kHz,
Small Signal Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
DC Current Gain
at VCE = 5 V, IC = 10 µA
Current Gain Group A
B
C
at VCE = 5 V, IC = 2 mA
Current Gain Group A
B
C
Thermal Resistance Junction to Substrate
Backside
Thermal Resistance Junction to Ambient Air
Collector Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
Base Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
Base-Emitter Voltage
at VCE = 5 V, IC = 2 mA
at VCE = 5 V, IC = 10 mA
Collector-Emitter Cutoff Current
at VCE = 80 V
at VCE = 50 V
at VCE = 30 V
at VCE = 80 V, Tj = 125 °C
at VCE = 50 V, Tj = 125 °C
at VCE = 30 V, Tj = 125 °C
BC846
BC847
BC848, BC849
BC846
BC847
BC848, BC849
Gain-Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 100 MHz
1) Device on fiberglass substrate, see layout
Symbol
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
hFE
hFE
hFE
hFE
hFE
hFE
RthSB
RthJA
VCEsat
VCEsat
VBEsat
VBEsat
VBE
VBE
ICES
ICES
ICES
ICES
ICES
ICES
fT
Min.
1.6
3.2
6
110
200
420
580
Typ. Max.
220
330
600
2.7
4.5
8.7
18
30
60
1.5 · 10–4
2 · 10–4
3 · 10–4
4.5
8.5
15
30
60
110
90 –
150 –
270 –
180 220
290 450
520 800
– 3201)
– 4501)
90 250
200 600
700 –
900 –
660 700
– 720
0.2 15
0.2 15
0.2 15
–4
–4
–4
300 –
Unit
k
k
k
µS
µS
µS
K/W
K/W
mV
mV
mV
mV
mV
mV
nA
nA
nA
µA
µA
µA
MHz




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BC846 transistor

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