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Infineon Technologies AG |
NPN Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC807, BC808 (PNP)
BC817, BC818
3
2
1 VPS05161
Type
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
Marking
6As
6Bs
6Cs
6Es
6Fs
6Gs
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 79 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
RthJS
BC817
BC818
45 25
50 30
55
500
1
100
200
330
150
-65 ... 150
215
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
A
mA
mW
°C
K/W
1 Nov-29-2001
BC817, BC818
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BC817
BC818
V(BR)CEO
45
25
-
-
V
-
-
Collector-base breakdown voltage
IC = 10 µA, IE = 0
BC817
BC818
V(BR)CBO
50
30
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 25 V, IE = 0
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain 1)
IC = 100 mA, VCE = 1 V
V(BR)EBO 5 - -
ICBO
- - 100 nA
ICBO
- - 50 µA
IEBO
- - 100 nA
hFE-grp.16
hFE-grp.25
hFE-grp.40
hFE
-
100 160 250
160 250 400
250 350 630
DC current gain 1)
IC = 300 mA, VCE = 1 V
hFE-grp.16
hFE-grp.25
hFE-grp.40
hFE
60 -
100 -
170 -
-
-
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat - - 0.7 V
Base-emitter saturation voltage 1)
IC = 500 mA, IB = 50 mA
VBEsat - - 1.2
1) Pulse test: t ≤ 300µs, D = 2%
2
Nov-29-2001
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