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BC807W 반도체 회로 부품 판매점

Surface mount Si-Epitaxial PlanarTransistors



Diotec Semiconductor 로고
Diotec Semiconductor
BC807W 데이터시트, 핀배열, 회로
BC 807W / BC 808W
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
2±0.1
0.3 3
Type
Code
12
1.3
1±0.1
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
225 mW
SOT-323
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Emitter-voltage
B shorted
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Coll. current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCE0
- VCES
- VCB0
- VEB0
Ptot
- IC
- ICM
- IBM
IEM
Tj
TS
Grenzwerte (TA = 25/C)
BC 807W
BC 808W
45 V
25 V
50 V
30 V
50 V
30 V
5V
225 mW 1)
500 mA
1000 mA
200 mA
1000 mA
150/C
- 65…+ 150/C
Characteristics, Tj = 25/C
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 1 V, - IC = 100 mA
- VCE = 1 V, - IC = 500 mA
- VCE = 1 V, - IC = 100 mA
BC807W
BC808W
Group -16W
Group -25W
Group -40W
hFE
hFE
hFE
hFE
hFE
Min.
Kennwerte, Tj = 25/C
Typ. Max.
100 – 600
40 –
100 160 250
160 250 400
250 400 600
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
4
01.11.2003


BC807W 데이터시트, 핀배열, 회로
General Purpose Transistors
BC 807W / BC 808W
Characteristics, Tj = 25/C
Collector saturation voltage – Kollektor-Sättigungsspg.
- IC = 500 mA, - IB = 50 mA
- VCEsat
Base saturation voltage – Basis-Sättigungsspannung
- IC = 500 mA, - IB = 50 mA
- VBEsat
Base-Emitter voltage – Basis-Emitter-Spannung
- VCE = 1 V, - IC = 500 mA
- VBE
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 20 V
IE = 0, - VCB = 20 V, Tj = 150/C
Emitter-Base cutoff current – Emitterreststrom
- ICB0
- ICB0
IC = 0, - VEB = 4 V
Gain-Bandwidth Product – Transitfrequenz
- IEB0
- VCE = 5 V, - IC = 10 mA, f = 50 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Min.
Kennwerte, Tj = 25/C
Typ.
Max.
– – 0.7 V
– – 1.3 V
– – 1.2 V
– – 100 nA
– – 5 :A
– – 100 nA
80 MHz 100 MHz
– 10 pF –
RthA 620 K/W 1)
BC 817W / BC 818W
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom
verstärkungsgruppen pro Typ
BC 807-16W = 5A
BC 807W = 5D
BC 808-16W = 5E
BC 808W = 5H
BC 807-25W = 5B
BC 808-25W = 5F
BC 807-40W = 5C
BC 808-40W = 5G
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
5




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BC807W transistor

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