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AUK corp |
Semiconductor
Descriptions
• High current application
• Switching application
BC807F
PNP Silicon Transistor
Features
• Suitable for AF-Driver stage and low power output stages
• Complementary Pair with BC817F
Ordering Information
Type NO.
BC807F
Outline Dimensions
Marking
LA
: hFE rank
Package Code0
SOT-23F
unit : mm
2.4±0.1
1.6±0.1
1
3
2
PIN Connections
1. Base
2. Emitter
3. Collector
KST-2085-000
1
BC807F
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
-50
-35
-5
-800
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage
Base-Emitter turn on voltage
Collector-Emitter saturation voltage
Collector cut-off current
DC current gain
Transition frequency
Collector output capacitance
BVCEO
VBE(ON)
VCE(sat)
ICBO
hFE*
fT
Cob
IC=-1mA, IB=0
VCE=-1V, IC=-300mA
IC=-500mA, IB=-50mA
VCB=-25V, IE=0
VCE=-1V, IC=-100mA
VCB=-5V, IE=10mA
f=100MHz
VCB=-10V, IE=0, f=1MHz
* : hFE rank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~ 630
Min.
-35
-
-
-
100
Typ.
-
-
-
-
-
(Ta=25°C)
Max. Unit
-V
-1.2
V
-700 mV
-100 nA
630 -
- 100 - MHz
- 16 - pF
KST-2085-000
2
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