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Siemens Semiconductor Group |
PNP Silicon AF Transistors
q For general AF applications
q High collector current
q High current gain
q Low collector-emitter saturation voltage
q Complementary types: BC 817, BC 818 (NPN)
BC 807
BC 808
Type
BC 807-16
BC 807-25
BC 807-40
BC 808-16
BC 808-25
BC 808-40
Marking
5As
5Bs
5Cs
5Es
5Fs
5Gs
Ordering Code
Q62702-C1735
Q62702-C1689
Q62702-C1721
Q62702-C1736
Q62702-C1504
Q62702-C1692
Pin Configuration
123
BEC
Package1)
SOT-23
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
Maximum Ratings
Parameter
Symbol
BC 807
Collector-emitter voltage
VCE0
45
Collector-base voltage
VCB0
50
Emitter-base voltage
VEB0
5
Collector current
IC
Peak collector current
ICM
Base current
IB
Peak base current
IBM
Total power dissipation, TC = 79 ˚C Ptot
Junction temperature
Tj
Storage temperature range
Tstg
Values
BC 808
25
30
5
500
1
100
200
330
150
– 65 … + 150
Thermal Resistance
Junction - ambient1)
Junction - soldering point
Rth JA
Rth JS
≤ 285
≤ 215
BC 807
BC 808
Unit
V
mA
A
mA
mW
˚C
K/W
1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
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