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PDF BC807-16W Data sheet ( Hoja de datos )
| Número de pieza | BC807-16W | |
| Descripción | Surface mount Si-Epitaxial PlanarTransistors | |
| Fabricantes | Diotec Semiconductor | |
| Logotipo |  |
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SPICE MODELS: BC807-16W BC807-25W BC807-40W
BC807-16W / -25W / -40W
Features
Lead-free Green
PNP SURFACE MOUNT TRANSISTOR
· Ideally Suited for Automatic Insertion
· Epitaxial Planar Die Construction
· For Switching, AF Driver and Amplifier Applications
· Complementary NPN Types Available (BC817-xxW)
· Lead Free By Design/RoHS Compliant (Note 1)
· "Green" Device (Note 2)
Mechanical Data
· Case: SOT-323
A
C
BC
· Case Material: Molded Plastic. "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
BE
G
H
· Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
K
· Pin Connections: See Diagram
· Marking: P/N Marking
J
DE
L
BC807-16W K5A
BC807-25W K5B
BC807-40W K5C
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
M
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
a 0° 8°
All Dimensions in mm
· Ordering & Date Code Information: See Page 3
· Approximate Weight: 0.006 grams
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation at TSB = 50°C (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Temperature Range
Symbol
VCEO
VEBO
IC
ICM
IEM
Pd
RqJA
Tj, TSTG
Value
-45
-5.0
-500
-1000
-1000
200
625
-65 to +150
Unit
V
V
mA
mA
mA
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic (Note 4)
Symbol Min Typ Max Unit
Test Condition
DC Current Gain
Current Gain Group -16
100 250 VCE = -1.0V, IC = -100mA
-25 160 400
-40
Current Gain Group -16
hFE
250
60
—
600
—
— VCE = -1.0V, IC = -300mA
-25 100 —
-40 170 —
Collector-Emitter Saturation Voltage
VCE(SAT)
—
— -0.7 V IC = -500mA, IB = -50mA
Base-Emitter Voltage
VBE — — -1.2 V VCE = -1.0V, IC = -300mA
Collector-Emitter Cutoff Current
ICES
—
—
-100
-5.0
nA VCE = -45V
µA VCE = -25V, Tj = 150°C
Emitter-Base Cutoff Current
IEBO — — -100 nA VEB = -4.0V
Gain Bandwidth Product
fT
100 —
—
MHz
VCE = -5.0V, IC = -10mA,
f = 50MHz
Collector-Base Capacitance
CCBO
—
—
12
pF VCB = -10V, f = 1.0MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect.
DS30577 Rev. 5 - 2
1 of 3
BC807-16W / -25W / -40W
www.diodes.com
ã Diodes Incorporated
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BC807-16W.PDF ] | |
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