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Diotec Semiconductor |
BC 807 / BC 808
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
2.9 ±0.1
0.4
3
Type
Code
1
1.9
2
1.1
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
310 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Emitter-voltage
B shorted
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Coll. current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCE0
- VCES
- VCB0
- VEB0
Ptot
- IC
- ICM
- IBM
IEM
Tj
TS
Grenzwerte (TA = 25/C)
BC 807
BC 808
45 V
25 V
50 V
30 V
50 V
30 V
5V
310 mW 1)
800 mA
1000 mA
200 mA
1000 mA
150/C
- 65…+ 150/C
Characteristics, Tj = 25/C
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 1 V, - IC = 100 mA
- VCE = 1 V, - IC = 500 mA
- VCE = 1 V, - IC = 100 mA
BC807
BC808
Group -16
Group -25
Group -40
hFE
hFE
hFE
hFE
hFE
Min.
Kennwerte, Tj = 25/C
Typ.
Max.
100 – 600
40 –
–
100 160 250
160 250 400
250 400 600
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
01.11.2003
General Purpose Transistors
BC 807 / BC 808
Characteristics, Tj = 25/C
Collector saturation voltage – Kollektor-Sättigungsspg.
- IC = 500 mA, - IB = 50 mA
- VCEsat
Base saturation voltage – Basis-Sättigungsspannung
- IC = 500 mA, - IB = 50 mA
- VBEsat
Base-Emitter voltage – Basis-Emitter-Spannung
- VCE = 1 V, - IC = 500 mA
- VBE
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 20 V
IE = 0, - VCB = 20 V, Tj = 150/C
Emitter-Base cutoff current – Emitterreststrom
- ICB0
- ICB0
IC = 0, - VEB = 4 V
Gain-Bandwidth Product – Transitfrequenz
- IEB0
- VCE = 5 V, - IC = 10 mA, f = 50 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Min.
Kennwerte, Tj = 25/C
Typ.
Max.
– – 0.7 V
– – 1.3 V
– – 1.2 V
– – 100 nA
– – 5 :A
– – 100 nA
80 MHz 100 MHz
–
– 12 pF –
RthA 320 K/W 1)
BC 817 / BC 818
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstärkungsgruppen pro Typ
BC 807-16 = 5A
BC 807 = 5D
BC 808-16 = 5E
BC 808 = 5H
BC 807-25 = 5B
BC 808-25 = 5F
BC 807-40 = 5C
BC 808-40 = 5G
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
3
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