파트넘버.co.kr BC807 데이터시트 PDF


BC807 반도체 회로 부품 판매점

Small Signal Transistors (PNP)



General Semiconductor 로고
General Semiconductor
BC807 데이터시트, 핀배열, 회로
BC807, BC808
Small Signal Transistors (PNP)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
12
.037(0.95) .037(0.95)
FEATURES
PNP Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier
applications.
Especially suited for automatic insertion
in thick- and thin-film circuits.
These transistors are subdivided into three groups -16,
-25 and -40 according to their current gain.
As complementary types, the NPN transistors BC817
and BC818 are recommended.
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking code
Type
BC807-16
-25
-40
BC808-16
-25
-40
Marking
5A
5B
5C
5E
5F
5G
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at TSB = 50 °C
Junction Temperature
Storage Temperature Range
1) Device on fiberglass substrate, see layout
BC807
BC808
BC807
BC808
Symbol
–VCES
–VCES
–VCEO
–VCEO
–VEBO
–IC
–ICM
–IBM
IEM
Ptot
Tj
TS
Value
50
30
45
25
5
500
1000
200
1000
3101)
150
– 65 to +150
Unit
V
V
V
V
V
mA
mA
mA
mA
mW
°C
°C
4/98


BC807 데이터시트, 핀배열, 회로
BC807, BC808
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
DC Current Gain
at –VCE = 1 V, –IC = 100 mA
Current Gain Group-16
-25
-40
at –VCE = 1 V, –IC = 300 mA
-16
-25
-40
Thermal Resistance Junction Substrate
Backside
Thermal Resistance Junction to Ambient Air
Collector Saturation Voltage
at –IC = 500 mA, –IB = 50 mA
Base-Emitter Voltage
at –VCE = 1 V, –IC = 300 mA
Collector-Emitter Cutoff Current
at –VCE = 45 V
at –VCE = 25 V
at –VCE = 25 V, Tj = 150 °C
BC807
BC808
Emitter-Base Cutoff Current
at –VEB = 4 V
Gain-Bandwidth Product
at –VCE = 5 V, –IC = 10 mA, f = 50 MHz
Collector-Base Capacitance
at –VCB = 10 V, f = 1 MHz
1) Device on fiberglass substrate, see layout
.30 (7.5)
.12 (3)
Symbol
hFE
hFE
hFE
hFE
hFE
hFE
RthSB
RthJA
–VCEsat
–VBE
–ICES
–ICES
–ICES
–IEBO
fT
CCBO
Min.
100
160
250
60
100
170
Typ.
100
12
.59 (15)
.03 (0.8)
.47 (12)
0.2 (5)
.04 (1) .08 (2)
.04 (1)
.08 (2)
.06 (1.5)
.20 (5.1)
Dimensions in inches (millimeters)
Layout for RthJA test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
Max.
Unit
250
400
600
3201)
4501)
0.7
1.2
K/W
K/W
V
V
100 nA
100 nA
5 µA
100 nA
– MHz
pF




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BC807 transistor

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