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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC636; BC638; BC640
PNP medium power transistors
Product specification
Supersedes data of 1997 Mar 07
1999 Apr 23
Philips Semiconductors
PNP medium power transistors
Product specification
BC636; BC638; BC640
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• Audio and video amplifiers.
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
DESCRIPTION
PNP medium power transistor in a TO-92; SOT54 plastic
package. NP complements: BC635, BC637 and BC639.
handbook, halfpage1
2
3
1
MAM285
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
collector-base voltage
BC636
BC638
BC640
VCEO
collector-emitter voltage
BC636
BC638
BC640
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
− −45 V
− −60 V
−
−100
V
− −45 V
− −60 V
− −80 V
− −5 V
− −1 A
− −1.5 A
−
−200
mA
− 0.83 W
−65
+150
°C
− 150 °C
−65
+150
°C
1999 Apr 23
2
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